Display substrate and display device

ABSTRACT

A display substrate and a display device are provided. The display substrate includes a sub-pixel and the sub-pixel includes a pixel circuit including a data writing sub-circuit, a storage sub-circuit and a driving sub-circuit. The display substrate further includes a first connection electrode and the storage sub-circuit includes a storage capacitor; the first connection electrode is in a same layer as the second capacitor electrode and is insulated form the second capacitor electrode, and the second capacitor electrode electrically connects the first capacitor electrode to the data writing sub-circuit.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.17/430,403, filed on Aug. 12, 2021, which is a national stageapplication of International Application No. PCT/CN2020/080240, filed onMar. 19, 2020. All the aforementioned patent applications are herebyincorporated by reference in their entireties.

TECHNICAL FIELD

Embodiments of the present disclosure relate to a display substrate anda display device.

BACKGROUND

Micro OLED displays involve the combination of organic light-emittingdiode (OLED) technology and complementary metal oxide semiconductor(CMOS) technology, and are related to a cross-integration of theoptoelectronic industry and the microelectronics industry, micro OLEDdisplays have promoted a development of a new generation of microdisplay technology, and have also promoted a research and development oforganic electronics on silicon, and even a research and development ofmolecular electronics on silicon.

Micro OLED displays have excellent display characteristics, such as highresolution, high brightness, rich colors, low drive voltage, fastresponse speed, and low power consumption, and have broad developmentprospects.

SUMMARY

At least an embodiment of the present disclosure provides a displaysubstrate, A display substrate, comprising a base substrate and asub-pixel on the base substrate, wherein the sub-pixel comprises a pixelcircuit, and the pixel circuit comprises a data writing sub-circuit, astorage sub-circuit and a driving sub-circuit, the storage sub-circuitcomprises a storage capacitor, and the capacitor comprises a firstcapacitor electrode and a second capacitor electrode which respectivelyserve as a first terminal and a second terminal of the storagesub-circuit; the data writing sub-circuit is electrically connected withthe first terminal of the storage sub-circuit, and is configured totransmit a data signal to the first terminal of the storage sub-circuitin response to a control signal; the driving sub-circuit comprises acontrol electrode, a first electrode and a second electrode, and thecontrol electrode is electrically connected with the first terminal ofthe storage sub-circuit; the driving sub-circuit is configured tocontrol a driving current which drives a light-emitting element to emitlight; the display substrate further comprises a first connectionelectrode; the first connection electrode is in a same layer as thesecond capacitor electrode and is insulated form the second capacitorelectrode, and the second capacitor electrode electrically connects thefirst capacitor electrode to the data writing sub-circuit.

In some examples, the first connection electrode comprises a firstportion extended along a first direction and a second portion extendedalong a second direction, the first portion and the second portion arein an integral structure, and the first direction and the seconddirection are orthogonal to each other; the first portion iselectrically connected with the data writing sub-circuit and the secondportion is electrically connected with the first capacitor electrode.

In some examples, an orthographic projection of the first portion of thefirst connection electrode on the base substrate is not overlapped withan orthographic projection of the storage capacitor on the basesubstrate.

In some examples, the driving sub-circuit comprises a drivingtransistor, and a gate electrode, a first electrode and a secondelectrode of the driving transistor respectively serve as the controlelectrode, the first electrode and the second electrode; in a directionperpendicular to the base substrate, the first connection electrode isnot overlapped with a channel region of the driving transistor.

In some examples, the display substrate further comprises a polysiliconlayer on the base substrate, and the control electrode of the drivingsub-circuit is in the polysilicon layer, and the first connectionelectrode is on a side of the polysilicon layer away from the basesubstrate.

In some examples, the driving current flows from the first electrode tothe light-emitting element along a current path which sequentiallycomprises a first straight current path, a second polyline current pathand a third U-shaped current path.

In some examples, the second polyline current path and the firststraight current path are respectively in different layers of thedisplay substrate.

In some examples, the first straight current path is in the basesubstrate, and the second polyline current path is in a layer where thefirst connection electrode is located.

In some examples, the display substrate further comprises a secondconnection electrode, the second polyline current path is in the secondconnection electrode, and a first terminal of the second connectionelectrode is electrically connected with the second electrode of thedriving sub-circuit.

In some examples, in a direction perpendicular to the base substrate,the first connection electrode is not overlapped with the secondconnection electrode.

In some examples, the first connection electrode and the secondconnection electrode are in a same layer and are insulated from eachother.

In some examples, the display substrate further comprises a U-shapedresistor on the base substrate, one terminal of the U-shaped resistor iselectrically connected with a second terminal of the second connectionelectrode, and another terminal of the U-shaped resistor is configuredto be electrically connected with the light-emitting element.

In some examples, the U-shaped resistor and the control electrode of thedriving sub-circuit are in a same polysilicon layer, and a resistivityof the U-shaped resistor is higher than a resistivity of the controlelectrode of the driving sub-circuit.

In some examples, in a direction perpendicular to the base substrate,the second connection electrode is at least partially overlapped withthe first capacitor electrode.

In some examples, an opening of the third U-shaped current path isfacing a side where the driving sub-circuit is located.

In some examples, the storage capacitor further comprises a thirdcapacitor electrode, wherein the third capacitor electrode is on a sideof the first capacitor electrode away from the second capacitorelectrode and is configured to be electrically connected with the secondcapacitor electrode.

In some examples, the third capacitor electrode is in the basesubstrate.

In some examples, the display substrate comprises a plurality ofsub-pixels arranged in an array along a first direction and a seconddirection different from the first direction, and along the seconddirection, the data writing sub-circuit, the first connection electrodeand the driving sub-circuit are sequentially arranged.

In some examples, the first connection electrode comprises a firstportion extended along the first direction and a second portion extendedalong the second direction, and the first portion and the second portionare in an integral structure; the first portion is electricallyconnected with the data writing sub-circuit and the second portion iselectrically connected with the first capacitor electrode.

At least an embodiment of the present disclosure further provides adisplay device, comprising any one of the above display substrates andthe light-emitting element.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to clearly illustrate the technical solution of the embodimentsof the present disclosure, the drawings of the embodiments will bebriefly described. It is apparent that the described drawings are onlyrelated to some embodiments of the present disclosure and thus are notlimitative of the present disclosure.

FIG. 1A is a first schematic diagram of a display substrate provided byat least one embodiment of the present disclosure;

FIG. 1B is a first pixel circuit diagram provided by at least oneembodiment of the present disclosure;

FIG. 1C is a schematic structural diagram of a pixel circuit;

FIG. 2A is a second pixel circuit diagram provided by at least oneembodiment of the present disclosure;

FIG. 2B is a third pixel circuit diagram provided by at least oneembodiment of the present disclosure;

FIG. 2C is a signal timing diagram of a pixel circuit provided by atleast one embodiment of the present disclosure;

FIG. 3A is a second schematic diagram of a display substrate provided byat least one embodiment of the present disclosure;

FIG. 3B is a schematic diagram of the display substrate shown in FIG. 3Aalong a section line I-I′;

FIG. 4A is a third schematic diagram of a display substrate provided byat least one embodiment of the present disclosure;

FIG. 4B is an enlarged schematic diagram of one sub-pixel of a displaysubstrate provided by at least one embodiment of the present disclosure;

FIGS. 5A to 5E are diagrams showing the manufacturing steps of thedisplay substrate shown in FIG. 4A;

FIGS. 6A to 6B are schematic diagrams of a first conductive layer of adisplay substrate provided by at least one embodiment of the presentdisclosure;

FIG. 6C shows a cross-sectional schematic diagram of FIG. 6B along asection line IV-IV′;

FIGS. 7A to 7B are schematic diagrams of a second conductive layer of adisplay substrate provided by at least one embodiment of the presentdisclosure;

FIGS. 8A to 8B are schematic diagrams of a third conductive layer of adisplay substrate provided by at least one embodiment of the presentdisclosure;

FIGS. 9A to 9B are schematic diagrams of a fourth conductive layer of adisplay substrate provided by at least one embodiment of the presentdisclosure;

FIG. 10A is a fourth schematic diagram of a display substrate providedby at least one embodiment of the present disclosure;

FIG. 10B is an enlarged schematic diagram of a region shown by a dottedline of the display substrate in FIG. 10A;

FIG. 10C is a cross-sectional schematic diagram of FIG. 10B along asection line V-V′;

FIG. 11A is a fifth schematic diagram of a display substrate provided byat least one embodiment of the present disclosure;

FIG. 11B is a sixth schematic diagram of a display substrate provided byat least one embodiment of the present disclosure;

FIG. 11C is a cross-sectional schematic diagram of the display substrateshown in FIG. 11B along a section line II-II′;

FIG. 11D is a cross-sectional schematic diagram of the display substrateshown in FIG. 11B along a section line; and

FIG. 12 is a schematic diagram of a display device provided by at leastone embodiment of the present disclosure.

DETAILED DESCRIPTION

In order to make objects, technical details and advantages ofembodiments of the present disclosure clear, the technical solutions ofthe embodiments will be described in a clearly and fully understandableway in connection with the related drawings. It is apparent that thedescribed embodiments are just a part but not all of the embodiments ofthe present disclosure. Based on the described embodiments herein, thoseskilled in the art can obtain, without any inventive work, otherembodiment(s) which should be within the scope of the presentdisclosure.

Unless otherwise defined, all the technical and scientific terms usedherein have the same meanings as commonly understood by one of ordinaryskill in the art to which the present disclosure belongs. The terms“first,” “second,” etc., which are used in the description and claims ofthe present disclosure, are not intended to indicate any sequence,amount or importance, but distinguish various components. The terms“comprises,” “comprising,” “includes,” “including,” etc., are intendedto specify that the elements or the objects stated before these termsencompass the elements or the objects listed after these terms as wellas equivalents thereof, but do not exclude other elements or objects.The phrases “connect”, “connected”, etc., are not intended to define aphysical connection or a mechanical connection, but may comprise anelectrical connection which is direct or indirect. The terms “on,”“under,” “right,” “left” and the like are only used to indicate relativeposition relationship, and in a case that the position of an object isdescribed as being changed, the relative position relationship may bechanged accordingly.

In the field of OLED (Organic Light-Emitting Diode) display, with therapid development of high-resolution products, higher requirements areput forward for a structural design of a display substrate, such as anarrangement of pixels and signal lines. For example, compared to an OLEDdisplay device with a resolution of 4K, the number of sub-pixel unitsthat need to be arranged in a large-size 8K resolution OLED displaydevice is doubled, and a pixel density is doubled accordingly; on onehand, a line width of the signal line is correspondingly smaller, whichleads to an increase of a self-resistance of the signal line; on theother hand, more overlapping regions exist between signal lines, whichleads to an increase of parasitic capacitance of the signal lines, thusleading to an increase of resistance capacitance load of the signallines. Correspondingly, signal delay (RC delay), voltage drop (IR drop),voltage rise (IR rise) and other phenomena caused by the resistancecapacitance load of the signal lines also become serious. Thesephenomena seriously affect a display quality of a display product.

A micro OLED display usually has a size of less than 100 microns, suchas a size less than 50 microns, and involves a combination of organiclight-emitting diode (OLED) technology and CMOS technology, whichmanufactures an OLED array on a silicon-based substrate including CMOScircuits.

Micro OLEDs are widely used in fields of AR and VR. With the continuousdevelopment of technology, higher resolutions are required for the MicroOLEDs. Therefore, higher requirements are put forward for the structuraldesign of the display substrate, such as the arrangement of the pixelsand the signal lines.

A display substrate provided by at least one embodiment of the presentdisclosure can achieve a sub-pixel area of 5.45 um×13.6 um by anoptimized layout and wiring design processing in the design, whichrealizes a pixel circuit array with a high resolution (PPI) and anoptimized arrangement, and achieves a better display effect.

FIG. 1A is a block diagram of a display substrate provided by at leastone embodiment of the present disclosure. As shown in FIG. 1A, thedisplay substrate 10 includes a plurality of sub-pixels 100 arranged inan array, a plurality of scan lines 11, and a plurality of data lines12. Each of the plurality of sub-pixels 100 includes a light-emittingelement and a pixel circuit that drives the light-emitting element. Theplurality of scan lines 11 and the plurality of data lines 12 cross eachother to define a plurality of pixel regions distributed in an array ina display region, and a pixel circuit of a sub-pixel 100 is provided ineach of the plurality of pixel regions. The pixel circuit is, forexample, a conventional pixel circuit, such as a 2T1C (that is, twotransistors and a capacitor) pixel circuit, a 4T2C pixel circuit, a 5T1Cpixel circuit, a 7T1C pixel circuit and other nTmC (n, m are positiveintegers) pixel circuits, and in different embodiments, the pixelcircuit may further include a compensation sub-circuit, the compensationsub-circuit includes an internal compensation sub-circuit or an externalcompensation sub-circuit, and the compensation sub-circuit may include atransistor and a capacitor and so on. For example, according to needs,the pixel circuit may further include a reset circuit, a light-emittingcontrol sub-circuit, and a detection circuit. For example, the displaysubstrate may further include a gate driving sub-circuit 13 and a datadriving sub-circuit 14 located in a non-display region. The gate drivingsub-circuit 13 is connected with the pixel circuit through the scanlines 11 to provide various scanning signals, and the data drivingsub-circuit 14 is connected with the pixel circuit through the datalines 12 to provide data signals. Positional relationships between thegate driving sub-circuit 13 and the data driving sub-circuit 14, andbetween the scan lines 11 and the data lines 12 shown in FIG. 1A areonly exemplary, and actual arrangement and positions can be designed asrequired.

For example, the display substrate 10 may further include a controlcircuit (not shown). For example, the control circuit is configured tocontrol the data driving sub-circuit 14 to apply the data signals and tocontrol the gate driving sub-circuit to apply the scanning signals. Anexample of the control circuit is a timing control circuit (T-con). Thecontrol circuit can be in various forms, for example, including aprocessor and a memory, the memory includes an executable code, and theprocessor runs the executable code to execute the above detectionmethod.

For example, the processor may be a central processing unit (CPU) orother form of processing device with data processing capability and/orinstruction execution capability, for example, may include amicroprocessor, a programmable logic controller (PLC), and so on.

For example, the storage device may include one or more computer programproducts, the computer program products may include various forms ofcomputer-readable storage media, such as a volatile memory and/or anon-volatile memory. The volatile memory may include, for example, arandom access memory (RAM) and/or a cache memory. The non-volatilememory may include, for example, a read-only memory (ROM), a hard disk,a flash memory, and so on. One or more computer program instructions canbe stored on a computer-readable storage medium, and the processor canexecute functions expected by the program instructions. Variousapplication programs and various data can also be stored in thecomputer-readable storage medium.

The pixel circuit may include a driving sub-circuit, a data writingsub-circuit, a compensation sub-circuit and a storage sub-circuit asrequired, and may further include a light-emitting control sub-circuit,and a reset circuit as required.

FIG. 1B shows a schematic diagram of a pixel circuit. As shown in FIG.1B, the pixel circuit includes a data writing sub-circuit 111, a drivingsub-circuit 112, and a storage sub-circuit 113.

The data writing sub-circuit 111 is electrically connected with a firstterminal of the storage sub-circuit 113, and is configured to transmit adata signal Vd to the first terminal of the storage sub-circuit 113 inresponse to a control signal (a first control signal SEL). A secondterminal of the storage sub-circuit 113 is, for example, configured toreceive a second power voltage VSS.

The driving sub-circuit 112 includes a control electrode 150, a firstelectrode 151 and a second electrode 152, The control electrode (controlterminal) 150 of the driving sub-circuit is electrically connected withthe first terminal of the storage sub-circuit, the first electrode(first terminal) 151 of the driving sub-circuit 112 is configured toreceive a first power voltage VDD, the second electrode (secondterminal) 152 of the driving sub-circuit 112 is electrically connectedwith a first node S, and is connected with a first electrode 121 of alight-emitting element 120. The driving sub-circuit 112 is configured todrive the light-emitting element 120 to emit light in response to avoltage at the first terminal of the storage sub-circuit. A secondelectrode 122 of the light-emitting element 120 is, for example,configured to receive a first common voltage Vcom1.

In at least some embodiments of the present disclosure, as shown in FIG.1B, the pixel circuit further includes a bias sub-circuit 114. The biassub-circuit 114 includes a control terminal, a first terminal and asecond terminal, the control terminal of the bias sub-circuit 114 isconfigured to receive a bias signal; the first terminal of the biassub-circuit 114 is configured to, for example, receive the second powervoltage VSS, the second terminal of the bias sub-circuit 114 iselectrically connected with the first node S. For example, the biassignal is a second common voltage Vcom2. For example, the bias signalVcom2 is a constant voltage signal, for example, ranging from 0.8V to1V; the bias sub-circuit 114 is normally open under the action of thebias signal, and is configured to provide a constant current, so thatthe voltage applied to the light-emitting element 120 has a linearrelationship with the data signal, which helps to achieve a fine controlof a gray scale, thereby improving a display effect. This will befurther explained in the following text in conjunction with specificcircuits.

For example, in the case that the data signal (voltage) Vd changes fromhigh to low, a gray-scale voltage written in the first electrode 121 ofthe light-emitting element 120 needs to change rapidly, and the biassub-circuit 114 can also allow the first electrode 121 of thelight-emitting element 120 to release charges quickly, thereby achievingbetter dynamic contrast.

The transistors used in the embodiments of the present disclosure mayall be thin film transistors or field effect transistors or otherswitching devices with the same characteristics, in the embodiments ofthe present disclosure, metal-oxide semiconductor field effecttransistors are taken as examples for description. A source electrodeand a drain electrode of a transistor used herein can be symmetrical instructure, so that there is no difference between the source electrodeand the drain electrode of the transistor in structure. In theembodiments of the present disclosure, in order to distinguish the twoelectrodes of the transistor other than a gate electrode, one electrodeis directly described as a first electrode, and the other electrode is asecond electrode. In addition, transistors can be divided into an N-typetransistor and a P-type transistor according to their characteristics.In a case that the transistor is the P-type transistor, a turn-onvoltage is a low-level voltage (for example, 0V,−5V,−10V or othersuitable voltages), and an off voltage is a high-level voltage (forexample, 5V, 10V or other suitable voltage); in a case that thetransistor is the N-type transistor, the turn-on voltage is a high-levelvoltage (for example, 5V, 10V or other suitable voltage), and the offvoltage is a low-level voltage (for example, 0V,−5V,−10V or othersuitable voltages).

The display substrate provided by the embodiments of the presentdisclosure may adopt a rigid substrate, such as a glass substrate, asilicon substrate, etc., and can also be formed of flexible materialswith excellent heat resistance and durability, such as polyimide (P1),polycarbonate (PC), polyethylene terephthalate (PET), polyethylene,polyacrylate, polyaryl compounds, polyetherimide, polyethersulfone,polyethylene glycol terephthalate (PET), polyethylene (PE),polypropylene (PP), polysulfone (PSF), polymethyl methacrylate (PMMA),triacetyl cellulose (TAC), cyclic olefin polymer (COP) and cyclic olefincopolymer (COC), etc. The embodiments of the present disclosure aredescribed by taking a silicon substrate as an example, that is, thepixel structure is manufactured on the silicon substrate, however, theembodiment of the present disclosure are not limited thereto.

For example, the pixel circuit includes a complementary metal oxidesemiconductor circuit (CMOS circuit), that is, the pixel circuit ismanufactured on a monocrystal silicon substrate. Relying on mature CMOSintegrated circuit technology, silicon-based technology can achievehigher accuracy (for example, the PPI can reach 6,500 or even more than10,000).

For example, in the case that a short circuit occurs between the firstelectrode 121 and the second electrode 122 of the light-emitting element120 in the sub-pixel due to process fluctuations of the displaysubstrate, the voltage of the first electrode 121 of the light-emittingelement 120 is too high (for example, the first common voltage Vcom1 isat a high potential) or too low (for example, the first common voltageVcom1 is at a low potential), causing a PN junction between the secondelectrode of the driving circuit and the base substrate to turn on, andcausing failure of the CMOS circuit, and resulting in defects such asdark lines in the display substrate.

In some examples, for example, the data writing sub-circuit includes afirst data writing transistor P1, and the driving sub-circuit includes adriving transistor N2; for example, the first data writing transistor isa P-type metal-oxide semiconductor field effect transistor (PMOS), thedriving transistor N2 is an N-type metal-oxide semiconductor fieldeffect transistor (NMOS), a gate electrode, a first electrode, and asecond electrode of the driving transistor N2 serve as the controlelectrode 150, the first electrode 151 and the second electrode 152 ofthe driving sub-circuit 112, respectively. In this case, for example, ina case that the first common voltage Vcom1 supplied to the secondelectrode 122 of the light-emitting element 120 is at a low potential,and the first electrode 121 and the second electrode 122 of thelight-emitting element 120 are short circuited, the potential of thesecond electrode of the driving transistor directly connected with thefirst electrode 121 is caused to be too low.

FIG. 1C shows a schematic diagram of the failure of the transistors inthe pixel circuit. An N-type active region (such as the secondelectrode) of the driving transistor N2, a P-type silicon-basedsubstrate, an N-type well region where the first data writing transistorP1 is located, and a P-type active region (such as the first electrode)of the first data writing transistor P1 form two parasitic transistorsQ1 and Q2 that are connected with each other, which forms an N-P-N-Pstructure. In the case that the potential of the second electrode (thatis, the first node S) of the driving transistor N2 is too low, causing aPN junction (a transmitting junction) between the second electrode (aheavily-doped N-type region) of the driving transistor N2 and the P-typesubstrate to be positively biased and Q1 to be turned on, which providesa current large enough to turn on the parasitic transistor Q2; in turn,the parasitic transistor Q2 feeds back a current to the parasitictransistor Q1, to form a vicious circle, finally most of the currentflows directly from VDD to VSS through the parasitic transistors withoutbeing controlled by the gate voltage of the transistor, which causes theCMOS pixel circuit to fail; in addition, the failure of the circuit willcause the parasitic transistor Q2 to continuously draw a current from aemitter, i.e., the data line, thereby causing a column of sub-pixelsconnected with the data line to fail, and causing defects such as a darkline on the display substrate, which greatly affects the display effect.

In at least some embodiments of the present disclosure, at least onesub-pixel further includes a resistance device, the resistance device isconnected between the second electrode 152 of the driving sub-circuit112 and the first electrode 121 of the light-emitting element 120, andthe resistance device can increase or decrease the potential of thefirst node S, so that the latch-up effect can be relieved or avoided,the reliability of the circuit can be improved, and the display effectcan be improved.

FIG. 2A is a schematic diagram of a pixel circuit provided by at leastone embodiment of the present disclosure. As shown in FIG. 2A, the pixelcircuit further includes the resistance device 130, the first terminal131 of the resistance device 130 is electrically connected with thesecond electrode 152 of the driving sub-circuit 112, and the secondterminal 132 is electrically connected with the first electrode 121 ofthe light-emitting element 120, that is, the second electrode 152 of thedriving sub-circuit 112 is electrically connected with the firstelectrode 121 of the light-emitting element 120 through the resistancedevice 130.

For example, the resistance device 130 is a constant resistor or avariable resistor, and may also be an equivalent resistor formed byother devices (such as a transistor).

For example, the resistance device 130 and the control electrode 150 ofthe driving sub-circuit 112 are arranged in a same layer and insulatedfrom each other, and a resistivity of the resistance device is higherthan a resistivity of the control electrode of the driving sub-circuit;that is, a conductivity of the control electrode of the drivingsub-circuit is higher than a conductivity of the resistance device. Forexample, the resistivity of the resistance device is more than ten timesof the resistivity of the control electrode.

It should be noted that the “in a same layer” mentioned in the presentdisclosure refers to forming two (or more than two) structures through asame deposition process and patterning them through a same patterningprocess, and the materials of the structures can be the same ordifferent. For example, the materials for forming precursors of thestructures arranged in the same layer are the same, and the finallyformed materials may be the same or different. The “an integratedstructure” in the present disclosure refers to an interconnectedstructure formed by forming two (or more than two) structures through asame deposition process and patterning them through a same patterningprocess, and the materials of the structures can be the same ordifferent.

Through this arrangement, the control electrode of the drivingsub-circuit and the resistance device can be formed in the samepatterning process, thereby saving process.

For example, both a material of the resistance device and a material thecontrol electrode of the driving sub-circuit are polysilicon materials,and a doping concentration of the resistance device is lower than adoping concentration of the control electrode, thus the resistancedevice has a higher resistivity than the control electrode. For example,the resistance device may be intrinsic polysilicon or lightly dopedpolysilicon, and the control electrode may be heavily doped polysilicon.

In other examples, the material of the control electrode is differentfrom the material of the resistance device. For example, the material ofthe control electrode may include a metal and the material of theresistance device may comprise a metal oxide corresponding to the metal.For example, the metal may include gold (Au), silver (Ag), copper (Cu),aluminum (Al), molybdenum (Mo), magnesium (Mg), tungsten (W), and alloymaterials composed of the above metals.

In at least one embodiment of the present disclosure, the data writingsub-circuit 111 may include a transmission gate circuit composed of twocomplementary transistors in parallel connection with each other; thecontrol signal includes two inverted control signals. The data writingsub-circuit 111 adopts a circuit in a transmission gate structure, whichcan help to transmit the data signal to the first terminal of thestorage sub-circuit 113 with no loss.

For example, the data writing sub-circuit includes a first controlelectrode, a second control electrode, a first terminal and a secondterminal, the first control electrode and the second control electrodeof the data writing sub-circuit are respectively configured to receive afirst control signal and a second control signal, the first terminal ofthe data writing sub-circuit is configured to receive a data signal, andthe second terminal of the data writing sub-circuit is electricallyconnected to the first terminal of the storage sub-circuit, and isconfigured to transmit the data signal to the first terminal of thestorage sub-circuit in response to the first control signal and thesecond control signal.

It should be noted that in the description of the embodiments of thepresent disclosure, the first node S does not necessarily represent anactual component, but represents a junction for connecting relatedcircuits in a circuit diagram.

It should be noted that in the description of the embodiments of thepresent disclosure, the symbol Vd can represent both the data signalterminal and a level of the data signal, similarly, the symbol SEL canrepresent both a control signal and a control signal terminal, thesymbols Vcom1 and Vcom2 can represent a first common voltage and asecond common voltage, and can also represent a first common voltageterminal and a second common voltage terminal; the symbol VDD canrepresent both a first voltage terminal and a first power voltage, andthe symbol VSS can represent both a second voltage terminal and a secondpower voltage. The case is the same in the following embodiments and isnot repeated.

FIG. 2B shows a circuit diagram of a specific implementation example ofthe pixel circuit shown in FIG. 2A. As shown in FIG. 2B, the datawriting sub-circuit 111 includes a first data writing transistor P1 anda second data writing transistor N1 that are connected in parallel witheach other. The first data writing transistor P1 and the second datawriting transistor N1 are a P-type metal-oxide semiconductor fieldeffect transistor (PMOS) and an N-type metal-oxide semiconductor fieldeffect transistor (NMOS), respectively. The control signal includes afirst control signal SEL and a second control signal SEL_B that areinverted to each other, a gate electrode of the first data writingtransistor P1 serves as the first control electrode of the data writingsub-circuit, and is configured to receive the first control signal SEL,a gate electrode of the second data writing transistor N1 serves as thesecond control electrode of the data writing sub-circuit, and isconfigured to receive the second control signal SEL_B. The firstelectrode of the second data writing transistor N1 and the firstelectrode of the first data writing transistor P1 are electricallyconnected and serve as the first terminal of the data writingsub-circuit, and are configured to receive a data signal Vd; the secondelectrode of the second data writing transistor N1 and the secondelectrode of the first data writing transistor P1 are electricallyconnected and serve as the second terminal of the data writingsub-circuit, and is electrically connected with the control electrode150 of the driving sub-circuit 112.

For example, the first data writing transistor P1 and the second datawriting transistor N1 have a same size and a same channel width tolength ratio.

The data writing sub-circuit 111 take advantages of the complementaryelectrical characteristics of the transistors and has a low on-stateresistance regardless of whether transmitting a high level or a lowlevel, so that the data writing sub-circuit 111 has an advantage ofelectrical signal integrity in the transmission, and can transmit thedata signal Vd to the first terminal of the storage sub-circuit 113without loss.

For example, as shown in FIG. 2B, the driving sub-circuit 112 includes adriving transistor N2, for example, the driving transistor N2 is NMOS.The gate electrode, the first electrode and the second electrode of thedriving transistor N2 serve as the control electrode, the firstelectrode and the second electrode of the driving sub-circuit 112,respectively.

For example, the storage sub-circuit 113 includes a storage capacitorCst, the storage capacitor Cst includes a first capacitor electrode 141and a second capacitor electrode 142, and the first capacitor electrode141 and the second capacitor electrode 142 serve as the first terminaland the second terminal of the storage sub-circuit 113, respectively.

For example, the resistance device 130 includes a resistor R. Forexample, a PN junction is formed between the second electrode 152 of thedriving sub-circuit 112 and the base substrate, a resistance value ofthe resistance device 130 is configured that in a case that the drivingtransistor N2 is operating in a saturation region, that is, in a casethat the pixel circuit operates to drive the light-emitting element 120to emit light, the PN junction is turned off. In this situation, even ifa short circuit occurs between the two electrodes of the light-emittingelement 120, because a voltage drop is occurred on the resistance device130, the potential of the second electrode 152 can be protected, so thatthe occurrence of the failure of the circuit is avoided.

For example, the resistance value R of the resistance device 130 meets:

${R > \frac{{❘{Vs}} - {Von} - {{Vcom}1❘}}{Is}},$

where Vs is a bias voltage of the base substrate, Vcom1 is the firstcommon voltage provided for the second electrode of the light-emittingelement, Von is the turn-on voltage of the PN junction, and Is is asaturation current of the driving transistor N2 working in thesaturation region, that is 1/2μ_(n)C_(ox)W/L (Vgs Vth)², where μ_(n) isa carrier mobility of the driving transistor, C_(ox) is a capacitanceper unit area of the gate insulating layer, W/L is a width to lengthratio of the channel region, Vgs is a voltage difference between thegate electrode and the source electrode of the driving transistor, andVth is a threshold voltage of the driving transistor. For example, theturn-on voltage Von ranges from 0.6V to 0.7V. Through the abovearrangement, it can be ensured that the PN junction formed between thesecond electrode 152 of the driving sub-circuit 112 and the basesubstrate is turned off in a case that the driving transistor N2 isworking in the saturation region.

For example, the light-emitting element 120 is specifically implementedas an organic light-emitting diode (OLED). For example, thelight-emitting element 120 may be an OLED with a top emitting structure,which may emit red light, green light, blue light, or white light. Forexample, the light-emitting element 120 is a micro OLED. The embodimentsof the present disclosure do not limit the specific structure of thelight-emitting element. For example, the first electrode 121 of thelight-emitting element 120 is an anode of the OLED, the second electrode122 is a cathode of the OLED, that is, the pixel circuit has a commoncathode structure. However, the embodiments of the present disclosureare not limited thereto; the pixel circuit may also be in a common anodestructure according to the change of the circuit structure.

For example, the bias sub-circuit 114 includes a bias transistor N3, andthe gate electrode, the first electrode and the second electrode of thebias transistor N3 serve as the control terminal, the first terminal andthe second terminal of the bias sub-circuit 114, respectively.

FIG. 2C shows a signal timing diagram of the pixel circuit shown in FIG.2B, the working principle of the pixel circuit shown in FIG. 2C isdescribed below in conjunction with the signal timing diagram shown inFIG. 2B. For example, the second data writing transistor, the drivingtransistor, and the bias transistor are all N-type transistors, and thefirst data writing transistor is a P-type transistor, however, theembodiments of the present disclosure are not limited thereto.

FIG. 2C shows waveform diagrams of each signal in two consecutivedisplay periods T1 and T2, for example, the data signal Vd is a highgray-scale voltage during the display period T1, and the data signal Vdis a low gray-scale voltage during the display period T2.

For example, as shown in FIG. 2C, a display process of each frame ofimage includes a data writing stage 1 and a light-emitting stage 2. Aworking process of the pixel circuit includes: in the data writing stage1, both the first control signal SEL and the second control signal SEL_Bare turn-on signals, the first data writing transistor P1 and the seconddata writing transistor N1 are turned on, the data signal Vd istransmitted to the gate electrode of the driving transistor N2 throughthe first data writing transistor P1 and the second data writingtransistor N1; in the light-emitting stage 2, both the first controlsignal SEL and the second control signal SEL_B are off signals, due to abootstrap effect of the storage capacitor Cst, the voltage across thestorage capacitor Cst remains unchanged, the driving transistor N2 worksin a saturated state and has an unchanged current, and drives thelight-emitting element 120 to emit light. In a case that the pixelcircuit enters the display period T2 from the display period T1, thedata signal Vd changes from a high gray-scale voltage to a lowgray-scale voltage, the bias transistor N3 under the control of thesecond common voltage Vcom2 generates a stable drain current which canquickly discharge the charge stored in the anode of the OLED in a casethat the display gray scale of the OLED needs to change rapidly. Forexample, the discharge process occurs during data writing stage 1 in thedisplay period T2, and thus in the light-emitting stage 2 of the displayperiod T2, the voltage of the anode of the OLED can be rapidly reduced,so that a better dynamic contrast is achieved, and the display effect isimproved.

Referring to FIG. 2B, for example, in the light-emitting stage, alight-emitting current of the light-emitting element OLED is on theorder of nanoamperes (for example, a few nanoamperes) in a case that thelight-emitting element OLED is written in a gray-scale data, while thebias transistor N3 generates a current generated on the order ofmicroamperes (for example, 1 microampere) while working in thesaturation region under the control of the bias signal, i.e. the secondcommon voltage Vcom2, and thus almost all the current flowing throughthe driving transistor N2 flows into the bias transistor N3, the currentof the driving transistor N2 and the current of the bias transistor N3can be regarded as the same, that is1/2μ_(n)C_(ox)W/L(Vgs1−Vth1)²=1/2μ_(n)C_(ox)W/L(Vgs2−Vth2)², here it isassumed that the driving transistor N2 and the bias transistor N3 have asame transistor conductivity μ_(n)C_(ox)W/L, then it is obtained thatVgs1−Vth1=Vgs2−Vth2, in which Vgs1 and Vth1 are the voltage differenceVgs1 between the gate electrode and the source electrode of the drivingtransistor N2 and the threshold voltage of the driving transistor N2,respectively; Vgs2 and Vth2 are the voltage difference between the gateelectrode and the source electrode of the bias transistor N3 and thethreshold voltage of the bias transistor N3, respectively; and becauseVgs2−Vth2=Vcom2−VSS−Vth2, which is a fixed value, denoted as K0, thatis, Vgs1−Vth1=K0, that is, Vd−V0−Vth1=K0, in which Vd is the data signalheld at the gate electrode of the driving transistor N2 during thelight-emitting stage, V0 is the voltage at the first node S. In thisway, it can be concluded that the voltage V0 at the first node S has alinear relationship with the data signal (data voltage) Vd.

For example, the bias transistor N3 works in a saturation region underthe control of the bias signal Vcom2, and a difference between a voltageof the gate electrode and a voltage of the source electrode of the biastransistor is Vcom2−VSS and is a fixed value; according to the aboveformular of a current of the transistor in a saturation region, thecurrent flowing through the bias transistor N3 in this situation is aconstant current, so the bias transistor N3 can be regarded as a currentsource.

For example, in the case that the first node S is directly electricallyconnected with the light-emitting element 120, the voltage V0 isdirectly applied to the first electrode 121 of the light-emittingelement 120, and is an anode voltage of the OLED for example; in a casethat the first node S is electrically connected with the light-emittingelement 120 through the resistance device 130, because the currentflowing through the light-emitting element 120 is extremely small, avoltage of the first node S can be approximately equal to a voltage ofthe first electrode 121 of the light-emitting element 120; that is, thevoltage of the first electrode 121 of the light-emitting element 120 isin a linear relationship with the data signal (data voltage) Vd, so thata fine control of the gray scale can be realized, and the display effectcan be improved.

For example, the first control signal SEL and the second control signalSEL_B are differential complementary signals with a same amplitude butopposite phases, which helps to improve an anti-interference performanceof the circuit. For example, the first control signal SEL and the secondcontrol signal SEL_B can be output by a same gate driving circuit unit(such as a GOA unit), thereby simplifying the circuit.

For example, as shown in FIG. 1A, the display substrate 10 may furtherinclude a data driving circuit 13 and a scan driving circuit 14. Thedata driving circuit 13 is configured to send out a data signal, such asthe above-mentioned data signal Vd, as required (for example, inputtingan image signal to the display device). The scan driving circuit 14 isconfigured to output various scanning signals, for example, includingthe above-mentioned first control signal SEL and second control signalSEL_B, for example, the scan driving circuit 14 is an integrated circuitchip (IC) or a gate driving circuit (GOA) directly manufactured on thedisplay substrate.

For example, the display substrate uses a silicon substrate as the basesubstrate 101, the pixel circuit, the data driving circuit 13 and thescan driving circuit 14 can all be integrated on the silicon substrate.In this case, since the silicon-based circuit can achieve a higheraccuracy, the data driving circuit 13 and the scan driving circuit 14may also be formed, for example, in a region corresponding to thedisplay region of the display substrate, and are not necessarily locatedin the non-display region.

For example, the display substrate 10 further includes a control circuit(not shown). For example, the control circuit is configured to controlthe data driving circuit 13 to apply the data signal Vd, and to controlthe gate driving circuit 13 to apply various scanning signals. Anexample of the control circuit is a timing control circuit (T-con). Thecontrol circuit can be in various forms, for example, including aprocessor and a memory, the memory includes executable code, and theprocessor runs the executable code to execute the above detectionmethod.

For example, the processor may be a central processing unit (CPU) oranother form of processing device with data processing capability and/orinstruction execution capability, for example, may include amicroprocessor, a programmable logic controller (PLC), and so on.

For example, the storage device may include one or more computer programproducts, the computer program product may include various forms ofcomputer-readable storage media, such as a volatile memory and/or anon-volatile memory. The volatile memory may include, for example, arandom access memory (RAM) and/or a cache memory. The non-volatilememory may include, for example, a read-only memory (ROM), a hard disk,a flash memory, and so on. One or more computer program instructions canbe stored on a computer-readable storage medium, and the processor 121can execute functions expected by the program instructions. Variousapplication programs and various data can also be stored in thecomputer-readable storage medium, for example, the electricalcharacteristic parameters obtained in the above detection method.

The following uses the pixel circuit shown in FIG. 2B as an example toillustrate the display substrate provided by at least one embodiment ofthe present disclosure, but the embodiments of the present disclosureare not limited thereto.

FIG. 3A is a schematic diagram of a display substrate 10 provided by atleast one embodiment of the present disclosure. For example, as shown inFIG. 3A, the display substrate 10 includes a base substrate 101, and aplurality of sub-pixels 100 are located on the base substrate 101. Theplurality of sub-pixels 100 are arranged as a sub-pixel array, a rowdirection of the sub-pixel array is a first direction D1, a columndirection of the sub-pixel array is a second direction D2, and the firstdirection D1 intersects the second direction D2, for example, the firstdirection D1 is orthogonal to the second direction D2. FIG. 3Aexemplarily shows two rows and six columns of sub-pixels, that is, twopixel rows 20 and six pixel columns 30, and uses dashed-line frames torespectively show the regions of three pixel columns spaced apart fromeach other.

For example, the base substrate 101 may be a rigid substrate, such as aglass substrate, a silicon substrate, etc., and can also be formed offlexible materials with excellent heat resistance and durability, suchas polyimide (P1), polycarbonate (PC), polyethylene terephthalate (PET),polyethylene, polyacrylate, polyaryl compounds, polyetherimide,polyether Sulfone, polyethylene glycol terephthalate (PET), polyethylene(PE), polypropylene (PP), polysulfone (PSF), polymethyl methacrylate(PMMA), triacetyl cellulose (TAC), cyclic olefin polymer (COP) andcyclic olefin copolymer (COC), etc. The embodiments of the presentdisclosure are described by always taking the base substrate 101 as asilicon substrate as an example, however, the embodiment of the presentdisclosure does not limit to this.

For example, the base substrate 101 includes monocrystal silicon orhigh-purity silicon. The pixel circuit is formed on the base substrate10 through a CMOS semiconductor process, for example, an active regionof the transistor (including the channel region, the first electrode andthe second electrode of the transistor) is formed in the base substrate101 through a doping process, each insulating layer is formed by asilicon oxidation process or a chemical vapor deposition process (CVD),and a plurality of conductive layers are formed by a sputtering processto form wiring structures. The active region of each of the transistorsis located inside the base substrate 101.

FIG. 3B shows a cross-sectional schematic diagram of FIG. 3A along asection line I-I′. For clarity, some traces or electrode structures thatare not directly connected are omitted in FIG. 3B.

For example, as shown in FIG. 3B, the display substrate 10 includes abase substrate 101, a first insulating layer 201, a polysilicon layer102, a second insulating layer 202, a first conductive layer 301, athird insulating layer 203, a second conductive layer 302, a fourthinsulating layer 204, a third conductive layer 303, a fifth insulatinglayer 205 and a fourth conductive layer 304 that are sequentiallylocated on the base substrate 101. In the following, the structure ofthe display substrate 10 will be described hierarchically, and FIG. 3Bwill be used as a reference and will be described together.

For clarity and convenience of description, FIG. 4A shows a portion ofthe display substrate 10 located below the first conductive layer 301,that is, the base substrate 101 and the first insulating layer 201 andthe polysilicon layer 102 on the base substrate 101, including each ofthe transistors (P1, N1-N3), a storage capacitor Cst, and a resistancedevice 130; FIG. 4B shows an enlarged schematic diagram of a sub-pixel100 in FIG. 4A; for clarity, the section line I-I′ in FIG. 3A is alsocorrespondingly shown in FIG. 4A, FIGS. 5A to 5E show a formationprocess of the substrate structure shown in FIG. 4A.

As shown in FIG. 4B, for example, in a direction parallel to a platesurface of the base substrate 101, the first data writing transistor P1and the driving transistor N2 are on opposite sides of the storagecapacitor Cst, for example, are on opposite sides of the storagecapacitor Cst in the second direction D2.

With reference to FIG. 1C, this arrangement helps to increase a distancebetween the first data writing transistor P1 and the driving transistorN2, so that the resistance of the parasitic circuit is increased, andthe risk of the failure of the CMOS circuit is further reduced.

For example, a material of the second capacitor electrode 142 of thestorage capacitor 140 is a conductor or a semiconductor. For example, asshown in FIG. 3B and FIG. 4B, the second capacitor electrode 142 of thestorage capacitor 140 is a first region 401 of the base substrate 101;for example, the base substrate 101 is a P-type silicon-based substrate,and the material of the second capacitor electrode 142 is P-typemonocrystal silicon. In a case that a voltage is applied to the firstcapacitor electrode 141, the semiconductive first region 401 locatedunder the first capacitor electrode 141 in the base substrate 101 formsan inversion region and becomes a conductor, so that the first region401 is electrically connected with the contact hole regions (the contacthole regions 145 a and 145 b as shown in FIG. 4B) on both sides of thefirst region 401. In this case, no additional doping process isperformed on the first region 401.

In another example, the first region 401 is, for example, a conductiveregion in the base substrate 101, such as a heavily doped region, sothat the second capacitor electrode 142 can obtain a stable and higherconductivity.

For example, the base substrate 101 further includes a second region402, and the second region 402 is an N-type well region in the basesubstrate 101. As shown in FIG. 4B, for example, the first data writingtransistor P1 and the resistance device 130 are arranged side by side inthe second direction D2 in the second region 402. Arranging theresistance device 130 made of polysilicon material in the N-typesubstrate helps to reduce parasitic effects, and improve the circuitcharacteristics.

For example, in a direction parallel to the plate surface of the basesubstrate 101, the resistance device (R) 130 and the first data writingtransistor P1 are located on a same side of the second capacitorelectrode 142. For example, in a direction parallel to the surface ofthe base substrate 101, the driving transistor N2 and the biastransistor N3 are located on a same side of the second capacitorelectrode 142.

For example, as shown in FIG. 4B, the first data writing transistor P1and the second data writing transistor P1 are arranged side by side inthe first direction D1, and are symmetrical about a symmetry axis alongthe second direction D2. For example, the gate electrode 160 of thefirst data writing transistor P1 and the gate electrode 170 of thesecond data writing transistor N1 are arranged side by side in the firstdirection D1, and are symmetrical about the symmetry axis along thesecond direction D2.

For example, the resistance device 130 is a U-shaped structure, such asan asymmetrical U-shaped structure, for example, lengths of two branchesof the U-shaped structure are not equal. For example, as shown in FIG.4B, the second terminal 132 of the resistance device 130 is closer tothe driving transistor N2.

The resistance device 130 arranged as a U-shaped structure helps to savea layout area occupied by the resistance device, so that the spaceutilization of the layout is improved, which helps to improve aresolution of the display substrate. For example, in a same space, theresistance device with the U-shaped structure can increase the length ofthe resistance device, so that a desired resistance value is obtained.

In addition, a design of the resistance device 130 as an asymmetricstructure is also to make a reasonable use of the layout space. Forexample, as shown in FIG. 4B, a contact hole region 411 a is designedabove a shorter branch of the U-shaped resistor. The contact hole region411 a is side by side with the second terminal 132 of the resistancedevice 130 in the first direction D1. For example, the contact holeregion 411 a is an N-type heavily doped region (N+). For example, thecontact hole region 411 is used to bias the well region 401 where thefirst data writing transistor P1 is located, so that a threshold voltagechange caused by parasitic effects such as a substrate bias effect isavoided, and the stability of the circuit is improved. For example,referring to FIG. 3B, by applying a low-voltage bias to the P-typesubstrate 101 and a high-voltage bias to the N-type well region 402, theparasitic PN junction between the P-type substrate 101 and the N-typewell region 402 can be reversely biased, so that electrical isolatebetween devices is realized, the parasitic effect between the devices isreduced, and the stability of the circuit is improved.

For example, an opening of the U-shaped structure faces the firstcapacitor electrode 141, the first terminal 131 and the second terminal132 of the resistance device 130 are respectively located at two ends ofthe U-shaped structure. As shown in the figure, the first terminal 131of the resistance device 130 is provided with a contact hole region 133for electrically connecting with the gate electrode 150 of the drivingtransistor N2; the second terminal 132 of the resistance device 130 isprovided with a contact hole region 134 for electrical connection withthe first electrode 121 of the light-emitting element 120.

For example, the material of the resistance device 130 includespolysilicon material, the contact hole regions 133 and 134 are dopedregions for reducing contact resistance; a body region of the resistancedevice 130 other than the contact hole region is, for example, anintrinsic region or a low-doped region, so that a desired resistancevalue is obtained.

For example, the first capacitor electrode 141 of the storage capacitor140 and the resistance device 130 are arranged in a same layer andinsulated from each other, and both include a polysilicon material; anda doping concentration of the first capacitor electrode 141 of thestorage capacitor 140 is higher than a doping concentration of the bodyregion of the resistance device 130. For example, the body region of theresistance device 130 is an intrinsic polysilicon material.

For example, the gate electrodes 160, 170, 150, and 180 of thetransistors P1, N1 to N3 and the first capacitor electrode 141 of thestorage capacitor 140 are arranged in a same layer, and all include apolysilicon material. For example, as shown in FIG. 4B, the gateelectrode 150 of the driving transistor N2 and the first capacitorelectrode 141 are connected with each other as an integral structure.

FIG. 4B also shows active regions P1 a, N1 a, N2 a, and N3 a of thetransistors P1, N1 to N3, respectively, and shows a first electrode 161and a second electrode 162 of the first data writing transistor P1, afirst electrode 171 and a second electrode 172 of the second datawriting transistor N1, a first electrode 151 and a second electrode ofthe driving transistor N2, a first electrode 181 and a second electrode182 of the bias transistor N3.

FIG. 4B also shows a gate contact region 165, a first contact region163, and a second electrode contact region 164 of the first data writingtransistor P1, a gate contact region 175, a first contact region 173,and a second electrode contact region 174 of the second data writingtransistor N1, a gate contact region 155, a first contact region 153 anda second electrode contact region 154 of the driving transistor N2, anda gate contact region 185, a first contact region 183, and a secondelectrode contact region 184 of the bias transistor N3. For example,each of the first electrode contact regions is a region where thecorresponding first electrode is used to form electrical contacts, eachof the second electrode contact regions is a region where thecorresponding second electrode contact region is used to form electricalcontacts, and each of the gate contact region is an area where thecorresponding gate electrode is used to form electrical contacts.

For example, the active region P1 a of the first data writing transistorP1 and the active region N1 a of the second data writing transistor N1are arranged side by side in the first direction D1, and are symmetricalabout a symmetry axis along the second direction D2.

As shown in FIG. 4B, an area of the active region N2 a of the drivingtransistor N2 is larger than an area of other transistors, so that agreater width to length ratio can be obtained, which helps to improvethe driving capability of the driving transistor N2 and improve thedisplay effect.

As shown in FIG. 4B, for the transistor with a larger active region,such as the drive transistor N2 and the bias transistor N3, since thespace is enough, at least two contact hole regions can be respectivelyprovided on the first electrode and the second electrode of the drivetransistor N2 and the bias transistor N3, So that the drive transistorN2 and the bias transistor N3 can get sufficient contact with thestructure to be connected and form a parallel structure, therebyreducing the contact resistance.

FIG. 4B also shows a contact hole region 144 on the first capacitorelectrode 141 and contact hole regions 145 a and 145 b that areconfigured to be electrically connected with the second capacitorelectrode 142. As shown in FIG. 4B, the first capacitor electrode 141and the second capacitor electrode 142 are respectively arranged with atleast two contact hole regions to reduce the contact resistance.

With reference to FIG. 4A, the transistors (including the shape and sizeof each transistor, etc.), the storage capacitors, and the resistancedevices in two sub-pixels 100 adjacent in the first direction D1 aresymmetrical about a symmetry axis along the second direction D2respectively, that is, the corresponding structures in the twosub-pixels are respectively symmetrical about the symmetry axis alongthe second direction D2. The transistors in two sub-pixels 100 adjacentin the second direction D2 is axially symmetrical with respect to asymmetry axis along the first direction.

The symmetrical arrangement can maximize a uniformity of process errors,so that a uniformity of the display substrate is improved. In addition,the symmetrical arrangement allows some structures in the substrate thatare arranged in a same layer and are connected with each other to beintegrally formed, compared with separate arrangements, the symmetricalarrangement can make the pixel layout more compact, and improves thespace utilization, so that the resolution of the display substrate isimproved.

For example, as shown in FIG. 4A, second regions 402 of two sub-pixels100 adjacent in the first direction D1 are in an integral structure,second regions 402 of two sub-pixels 100 adjacent in the seconddirection D2 are in an integral structure, that is, the first datawriting transistor N1 and the resistance device 130 in the four adjacentsub-pixels 100 are located in a same well region. Compared with separatewell regions, this arrangement can make the arrangement of pixels morecompact under the premise of meeting the design rules, which helps toimprove the resolution of the display substrate.

For example, as shown in FIG. 4A, the active regions P1 a of the firstdata writing transistors P1 of two sub-pixels adjacent in the seconddirection D2 are connected with each other as an integral structure,that is, the active regions P1 a of the two first data writingtransistors P1 are located in a same doped region A1 (P well) of thesame second region 402, and the first electrodes of the two first datatransistors P1 are connected with each other as an integral structure,to receive the same data signal Vd.

For example, as shown in FIG. 4A, the active regions N1 a of the seconddata writing transistors N1 of two sub-pixels adjacent in the seconddirection D2 are connected with each other as an integral structure,that is, the active regions N1 a of the two second data writingtransistors N1 are located in a same doped region A2 (N-well) of thebase substrate 101, and the first electrodes of the two second datawriting transistors N1 are connected with each other as an integralstructure, to receive the same data signal Vd.

For example, as shown in FIG. 4A, the gate electrodes of the first datawriting transistor P1 or the gate electrodes of the second data writingtransistor N2 of two sub-pixels 100 adjacent in the first direction D1are connected with each other to form an integral structure.

Since for each row of pixels, the gate electrodes of the first datawriting transistor P1 are all configured to receive the same firstcontrol signal SEL, and the gate electrodes of the second data writingtransistor N1 are all configured to receive the same second controlsignal SEL_B; additionally, since the transistors of the two sub-pixelsadjacent in the first direction D1 are mirror-symmetrical, and the casewhere the first data writing transistor P1 of two sub-pixels areadjacent and the case where the second data writing transistors N1 oftwo sub-pixels are adjacent happen alternately in the first directionD1; therefore, the gate electrodes of two adjacent first data writingtransistors P1 can be directly connected as an integral structure toform a first control electrode group 191, and the gate electrodes of theadjacent second data writing transistors N1 can be directly connected asan integral structure to form a second control electrode group 192. Thisarrangement can make the arrangement of the pixels more compact on thepremise of meeting the design rules, which helps to improve theresolution of the display substrate.

As shown in FIG. 4A, for two sub-pixels 100 adjacent in the firstdirection D1, in a case that their driving transistors N2 are adjacentto each other, the active regions N2 a of the two driving transistors N2are connected with each other as an integral structure, that is, theactive regions N2 a of the two driving transistors N2 are located in asame doped region B (N well) of the base substrate 101, and the firstelectrodes of the two driving transistors N2 are connected with eachother as an integral structure to form a third control electrode group193, to receive the same first power supply voltage VDD; in a case thattheir bias transistors N3 are adjacent to each other, the gateelectrodes of the two bias transistors N3 are connected to each other asan integral structure, to receive the same second common voltage Vcom2;the active regions N3 a of the two bias transistors N3 are connectedwith each other as an integral structure, that is, the active regions N3a of the two bias transistors N3 are located in a same doped region C (Nwell) of the base substrate 101, and the first electrodes of the twobias transistors N3 are connected with each other to form an integralstructure, to receive the same second power voltage VSS.

This arrangement can make the arrangement of the pixels more compact onthe premise of meeting the design rules, which helps to improve theresolution of the display substrate.

FIGS. 5A to 5D show the formation process of the substrate structureshown in FIG. 4A, for clarity, only two rows and two columns ofsub-pixels are shown in the figure, that is, four adjacent sub-pixels100 are shown, and the four sub-pixels 100 form a pixel unit group 420.FIG. 4A illustrates the pixel unit group 420 with a dotted box. Forexample, the display substrate comprises a plurality of pixel unitgroups arranged along the first direction and the second direction.

In the following, a forming process of the display substrate provided bythe embodiment of the present disclosure will be exemplarily describedwith reference to FIGS. 5A to 5D, but this is not a limitation of thepresent disclosure.

For example, a silicon-based substrate is provided, for example, amaterial of the silicon-based substrate is P-type monocrystallinesilicon. N-type transistors (such as driving transistors) can bedirectly manufactured on the P-type silicon substrate, that is, theP-type substrate serves as the channel region of the N-type transistors,which is conducive to taking advantage of a high speed of NMOS devices,and improves the circuit performance.

As shown in FIG. 5A, for example, N-type doping is performed on a P-typesilicon substrate, to form an N-type well region, that is, the secondregion 402, which serves as a substrate for the first data writingtransistor P1 and the resistance device 130.

For example, the second regions 402 of two sub-pixels adjacent in thefirst direction D1 may be connected with each other, and the secondregions 402 of two sub-pixels adjacent in the second direction D2 may beconnected with each other. For example, the region which is not to bedoped in the base substrate 101 is shielded while performing the N-typedoping treatment.

As shown in FIG. 4B and FIG. 5B, for example, a first insulating layer201 is formed on the base substrate 101, then a polysilicon layer 102 isformed on the first insulating layer 201.

The first insulating layer 201 includes the gate insulating layer ofeach of the transistors, and further includes a dielectric layer 104 ofthe storage capacitor Cst. The polysilicon layer 102 includes a firstcapacitor electrode 141, a resistance device 130, and gate electrodes150, 160, 170, and 180 of each of the transistors (P1, N1 to N3).

The gate electrode of the first data writing transistor P1 is located inthe second region 402, and the N-type well region serves as the channelregion of the P-type transistor. The resistance device 130 is alsolocated in the second region 402, that is, an orthographic projection ofthe resistance device 130 on the base substrate is in the second region4. Forming the resistance device 130 made of polysilicon material in theN-type substrate helps to reduce parasitic effects and improve thecircuit characteristics. Each of the N-type transistors is directlyformed on the P-type substrate outside the N-type well region.

For example, as shown in FIG. 5B, the orthographic projections of thefirst capacitor electrodes 141 of the four sub-pixels in each pixel unitgroup on the base substrate is outside the second region 402, andsurrounds the second region 402. For example, the second region 402 isrectangular, the orthographic projection of the first capacitorelectrode 141 of each sub-pixel on the base substrate is around a cornerof the rectangle; for example, each first capacitor electrode 141comprises a concave structure, and an outline of the concave structureis L-shaped, the corner of the rectangle stretches into the orthographicprojection of the concave structure and matches the L-shaped outline.

As shown in FIG. 5B, patterns of the polysilicon layers in the twosub-pixels adjacent in the first direction D1 are symmetrical about asymmetry axis along the second direction D2; and patterns of thepolysilicon layers in the two sub-pixels adjacent in the seconddirection D2 are symmetrical about a symmetry axis along the firstdirection D1; that is, the pattern of the polysilicon layer is asymmetrical pattern. For example, as shown in FIG. 5B, the resistancedevices of sub-pixels adjacent in the first direction are symmetricalabout a symmetry axis along the second direction, and the resistancedevices of sub-pixels adjacent in the second direction are symmetricalabout a symmetry axis along the first direction. For example, the firstcapacitor electrodes of sub-pixels adjacent in the first direction aresymmetrical about a symmetry axis along the second direction, and thefirst capacitor electrodes of sub-pixels adjacent in the seconddirection are symmetrical about a symmetry axis along the firstdirection.

For example, the gate electrodes of the first data writing transistor P1of two sub-pixels adjacent in the first direction D1 are symmetricalabout a symmetry axis along the second direction, and the gateelectrodes of the second data writing transistor N1 of the twosub-pixels adjacent in the first direction D1 are symmetrical about asymmetry axis along the second direction. For example, the gateelectrodes of the first data writing transistor P1 of two sub-pixelsadjacent in the first direction D1 are integrally formed, and the gateelectrodes of the second data writing transistor N1 of the twosub-pixels adjacent in the first direction D1 are integrally formed.

For example, the gate electrodes of the first data writing transistor P1of two sub-pixels adjacent in the second direction D2 are symmetricalabout a symmetry axis along the first direction, and the gate electrodesof the second data writing transistor N1 of the two sub-pixels adjacentin the second direction D2 are symmetrical about a symmetry axis alongthe first direction.

For example, the first insulating layer is formed on the base substrateby a thermal oxidation method. For example, a material of the firstinsulating layer is silicon nitride, oxide or oxynitride.

For example, a polysilicon material layer is formed on the firstinsulating layer by a chemical vapor deposition process (PVD), then aphotolithography process is performed on the polysilicon material layerto form the polysilicon layer 102.

FIG. 5C shows a doping window region 103 of the base substrate (leftpicture), and also shows the doping window region on the substratestructure as shown in FIG. 5B (right picture). For example, the dopingis heavy doping, to form contact hole regions for electrical connectionin the base substrate. For example, the doping window region includesthe source region and the drain region of each of the transistors. Forexample, the doping window region also includes the contact hole regionsof the substrate and the contact hole regions of the resistance device130, for example, including the contact hole regions 400 a, 400 b, 411a, 411 b, 145 a, 145 b, 133, 134 shown in FIG. 4B. For example, sincethe gate electrode of the transistor is formed of polysilicon material,the polysilicon gate electrode also needs to be doped. In a case thatthe doping is performed, a barrier layer needs to be formed to cover thenon-doped region, and only the corresponding doping window region andamorphous silicon areas are exposed.

It should be noted that FIG. 5C only illustrates each doping windowregion, in a case that an actual doping process is performed, acorresponding barrier layer/mask layer can be arranged to expose boththe corresponding doping window region and the polysilicon region fordoping. For example, a material of the barrier layer/mask layer may bephotoresist or an oxide material.

As shown in FIG. 5D, a barrier layer 135 is formed corresponding to theresistance device 130. In order to protect a resistance of theresistance device 130, the resistance device 130 needs to be shieldedduring the doping process to prevent the resistance device 130 frombeing damaged due to the doping. The barrier layer 135 covers the mainbody of the resistance device 130 and only exposes the contact holeregions 133 and 134 at both ends of the resistance device 130.

For example, the barrier layer 135 may be made of silicon nitride, oxideor oxynitride, or a photoresist material. After finishing the dopingprocess, the barrier layer 135 may remain in the display substrate, ormay be removed.

In other examples, the barrier layer 135 of the resistance device 130can also be formed together with barrier layers/mask layers in otherregions during doping, which are not limited in the embodiments of thepresent disclosure.

For example, during the doping process, the N-type doping and the P-typedoping need to be performed separately, for example, to form both thesource region and the drain region of the N-type transistor and both thesource region and the drain region of the P-type transistor. In a casethat the N-type doping process is performed, the barrier layer needs tobe formed to shield the region where the N-type doping is not to beperformed; in a case that the P-type doping process is performed, abarrier layer needs to be formed to shield the region where the P-typedoping is not to be performed.

FIG. 5E shows the N-type doped region SN and the P-type doped region SPwith different shading patterns (left picture), and also shows theN-type doped region SN and the P-type doped region SP on the substrateshown in FIG. 5D (right picture). The N-type doped region SN and theP-type doped region SP are also shown in FIG. 4B, and can be referred totogether.

For example, performing an N-type doping process includes forming abarrier layer to cover the P-type doped region SP, and to cover theregion of the N-type doped region SN except for the doping window regionand the polysilicon region, and only the doping window region and thepolysilicon region in the N-type doped region SN are retained, that is,the SN region overlaps with the doping window region 103 and thepolysilicon region shown in FIG. 5C; then an N-type doping process isperformed. Referring to FIG. 4B, the gate electrodes, the firstelectrodes and the second electrodes of the transistors N1 to N3, andthe contact hole regions 411 a, 411 b, 145 a, 145 b can be formedthrough the N-type doping process. The N-type doping process may be, forexample, an ion implantation process, and the doping element may be, forexample, boron element.

For example, performing a P-type doping process includes forming abarrier layer to cover the N-type doped region SN, and to cover theP-type doped region SP except for the doping window region and thepolysilicon region, and only the doping window region and thepolysilicon region in the P-type doped region SP are retained, that is,the SP region overlaps with the doping window region 103 and thepolysilicon region shown in FIG. 5C; then the P-type doping process isperformed. Referring to 4B, the gate electrode, the first electrode andthe second electrode of the transistor P1, and the contact holes 400 a,400 b, 133, and 134 can be formed through the P-type doping process. TheP-type doping process may be, for example, an ion implantation process,and the doping element may be, for example, phosphorus element.

In the doping process, for example, an ion implantation process isapplied, and the polysilicon pattern can serve as a mask, so that animplantation of ions into the silicon-based substrate happens on bothsides of the polysilicon, thereby forming the first electrode and thesecond electrode of each of the transistors, and realizing aself-alignment. In addition, a resistivity of the polysilicon withoriginal high resistance is reduced through the doping process, the gateelectrode of each transistor and the first capacitor electrode can beformed. Therefore, using the polysilicon material the material of theresistance device and the gate electrode has multiple beneficialeffects, and the process cost is reduced.

In this way, the structure of the display substrate shown in FIG. 4A isformed, which includes each of the transistors P1, N1 to N3, theresistance device 130 and the storage capacitor Cst.

For example, corresponding transistors, the resistance devices, and thestorage capacitors Cst in two sub-pixels adjacent in the first directionD1 are respectively symmetrical about a symmetry axis along the seconddirection D2; corresponding transistors, resistance devices, and storagecapacitors Cst in two sub-pixels in adjacent the second direction D2 arerespectively symmetrical about a symmetry axis along the first directionD1.

It should be noted that, in the embodiment, the storage capacitor Cst isa capacitor formed by a field effect, after a voltage is applied to thefirst capacitor electrode 141, inversion charges are generated in aregion of the base substrate 101 under the first capacitor electrode141, rendering a bottom electrode plate of the storage capacitor Cst, i.e. the second capacitor electrode 142 conductive.

In other embodiments, a conducting treatment (for example, a dopingtreatment) may be performed in advance on the region of the basesubstrate 101 located below the first capacitor electrode 141 to formthe second capacitor electrode 142. The embodiments of the presentdisclosure are not limited thereto.

The second insulating layer 202, the first conductive layer 301, thethird insulating layer 203, the second conductive layer 302, the fourthinsulating layer 204, the third conductive layer 303, the fifthinsulating layer 205, and the fourth conductive layer 304 aresequentially formed on the substrate shown in FIG. 4A, and the displaysubstrate shown in FIG. 3A is formed.

FIGS. 6A and 6B respectively show a pattern of the first conductivelayer 301 and a situation where the first conductive layer 301 isarranged on the substrate structure shown in FIG. 4A, FIG. 6C shows across-sectional schematic diagram of FIG. 6B along a section lineIV-IV′; FIG. 6B also shows via holes in the second insulating layer 202,and the via holes correspond to the contact regions in FIG. 4B in aone-to-one correspondence and are used to electrically connect each ofthe contact hole regions with the pattern in the first conductive layer301. For clarity, only two rows and six columns of sub-pixels are shownin the figure, and a dotted frame is used to show a region of onesub-pixel 100; in addition, FIG. 6B also correspondingly shows aposition of the section line I-I′ in FIG. 3A.

As shown in FIG. 6A, patterns of the first conductive layers in twosub-pixels adjacent in the first direction D1 are symmetrical about asymmetry axis along the second direction D2; patterns of the firstconductive layers in two sub-pixels adjacent in the second direction D2are symmetrical about a symmetry axis along the first direction D1. Thepattern of the first conductive layer will be exemplarily describedbelow by taking one sub-pixel as an example.

As shown in FIG. 6A, the first conductive layer 301 includes aconnection electrode 313 (an example of the second connection electrodeof the present disclosure), and the connection electrode 313 is used toelectrically connect the first terminal 131 of the resistance device 130with the second electrode 152 of the driving sub-circuit 112.

For example, with reference to FIG. 6B, a first end of the connectionelectrode 313 is electrically connected with the first terminal 131 ofthe resistance device 130 through a via hole 225 (an example of thefirst via hole of the present disclosure) in the second insulating layer202; a second end of the connection electrode 313 includes a firstbranch 331 and a second branch 332, combining with FIG. 3B, the firstbranch 331 is electrically connected with the first electrode 151 of thedriving transistor N2 through the via hole 226 a (an example of thesecond via hole of the present disclosure) in the second insulatinglayer 202, and the second branch 332 is electrically connected with thefirst electrode 181 of the bias transistor N3 through a via hole 226 bin the second insulating layer 202.

For example, as shown in FIG. 6B, in the second direction D2, the viahole 225 and the via hole 226 a are respectively located on oppositesides of the first capacitor electrode 141; that is, an orthographicprojection of the connection electrode 313 on the base substrate 101crosses over an orthographic projection of the first capacitor electrode141 on the base substrate 101 in the second direction D2.

For example, a number of both the via hole 226 a and the via hole 226 bmay be at least two, to reduce the contact resistance.

For example, with referring to FIGS. 6A and 6B, the first conductivelayer 301 further includes a connection electrode 314, the connectionelectrode 314 is electrically connected with the second terminal 132 ofthe resistance device 130 through the via hole 229 in the secondinsulating layer 202, and the connection electrode 314 is configured tobe electrically connected with the first electrode 121 of thelight-emitting element 120.

For example, the connection electrode 314 is L-shaped, one branch of theconnection electrode 314 is electrically connected with the secondterminal 132 of the resistance device 130, and the other branch isconfigured to be electrically connected with the first electrode 121 ofthe light-emitting element 120.

For example, as shown in FIG. 6B and FIG. 6C, the first conductive layer301 also includes a third capacitor electrode 315, the third capacitorelectrode 315 overlaps with the first capacitor electrode 141 in adirection perpendicular to the base substrate. The third capacitorelectrode 315 is on a side of the first capacitor electrode 141 awayfrom the second capacitor electrode 142, and is configured to beelectrically connected with the second capacitor electrode 142; that is,in the direction perpendicular to the base substrate, the secondcapacitor electrode 142 and the third capacitor electrode 315 arelocated on two sides of the first capacitor electrode 141 respectively,and are electrically connected with each other, so that a structure ofparallel capacitors is formed, and the capacitance value of the storagecapacitor Cst is increased.

For example, as shown in FIG. 6B and FIG. 6C, the third capacitorelectrode 315 comprises a first portion 315 a and a second portion 315b, and the first portion 315 a and the second portion 315 b are spacedapart from each other in the first direction D1. For example, the firstportion 315 a is electrically connected with the contact hole region 145b through a via hole 228 in the second insulating layer 202, so as to beelectrically connected with the second capacitor electrode 142; thesecond portion 315 b is electrically connected with the contact holeregion 145 a through a via hole 227 in the second insulating layer 202,so as to be electrically connected with the second capacitor electrode142.

For example, the first portion 315 a and the second portion 315 b of thethird capacitor electrode 315 are located on two sides of the connectionelectrode 313 in the first direction D1, and are respectively spacedapart from the connection electrode 313.

For example, the third capacitor electrodes of two sub-pixels adjacentin the first direction D1 are about a symmetry axis along the seconddirection D2; and the third capacitor electrodes of two sub-pixelsadjacent in the second direction D1 are about a symmetry axis along thefirst direction D1.

For example, as shown in FIG. 6B, the first portions 315 a or the secondportions 315 b of the third capacitor electrodes of two sub-pixelsadjacent in the first direction D1 are in an integral structure.

For example, as shown in FIG. 6B, for each pixel unit group 420, thefirst portions 315 a of the third capacitor electrodes of two sub-pixelsadjacent in the first direction D1 are connected with each other as anintegral structure.

For example, as shown in FIG. 6B, the second portion 315 b of the thirdcapacitor electrode 315 of a sub-pixel in each pixel unit group 420 andthe second portion 315 b of the third capacitor electrode 315 of asub-pixel, which is adjacent to the sub-pixel, in a pixel unit groupadjacent to the each pixel unit group 420 are connected as an integralstructure.

For example, as shown in FIG. 6A, adjacent third capacitor electrodes315 in two sub-pixels adjacent in the first direction D1 may beintegrally formed to receive the same second power voltage VSS, andadjacent third capacitor electrodes 315 in two sub-pixels adjacent inthe first direction Dlmay be integrally formed to receive the samesecond power voltage VSS.

For example, at least two via holes 227 and 228 may be arrangedrespectively to reduce the contact resistance; for example, the at leasttwo via holes 227 are arranged along the second direction D2, and the atleast two via holes 228 are arranged along the second direction D2.

For example, the first conductive layer 301 further includes aconnection electrode 317 (an example of the first connection electrodeof the present disclosure), and the connection electrode 317 is used toelectrically connect the second terminal of the data writing sub-circuitwith the first terminal of the storage sub-circuit, that is,electrically connecting the second electrode 161 of the first datawriting transistor P1, the second electrode 171 of the second datawriting transistor N1, and the first capacitor electrode 141.

With referring to FIG. 6A and FIG. 6B, the connection electrode 317includes three ends, for example, a T-shaped structure. With referringto FIG. 3B, the first end of the connection electrode 317 iselectrically connected with the second electrode of the first datawriting transistor P1 through a via hole 261 a in the second insulatinglayer 202, the second end of the connection electrode 317 iselectrically connected with the second electrode of the second datawriting transistor N1 through a via hole 261 b in the second insulatinglayer 202, and the third end of the connection electrode 317 iselectrically connected with the first capacitor electrode 141 through avia hole 261 c in the second insulating layer 202.

For example, as shown in FIG. 6B, in the second direction D2, the thirdend of the connection electrode 314 at least partially overlaps with theconnection electrode 317. This arrangement makes the pixel layout morecompact, so that the space utilization rate of the display substrate isimproved, and the resolution of the display substrate is improved.

With referring to FIG. 6A and FIG. 6B, the first conductive layer 301further includes a first scan line connection portion 311 and a secondscan line connection portion 312, and the first scan line connectionportion 311 is configured to be electrically connected with the firstscan line so that the gate electrode of the first data writingtransistor P1 receives the first control signal SEL. The second scanline connection portion 312 is configured to be electrically connectedwith the second scan line so that the gate electrode of the second datawriting transistor N1 receives the first control signal SEL_B.

For example, the first scan line connection portion 311 is electricallyconnected with the gate electrode of the first data writing transistorP1 through a via hole 221 in the second insulating layer 202, and thesecond scan line connection portion 312 is electrically connected withthe gate electrode of the second data writing transistor N1 through avia hole 222 in the second insulating layer 202.

For example, as shown in FIG. 6A, sub-pixels adjacent in the firstdirection D1 share a first scan line connection portion 311 or a secondscan line connection portion 312.

For the specific description of the first scan line connection portionand the second scan line connection portion, the description of FIGS.10A to 10B below can be referred to.

As shown in FIG. 6A, the first conductive layer 301 further includes adata line connection portion 245, and the data line connection portion245 is configured to be electrically connected with the data line, sothat the first electrode of the first data writing transistor P1 and thefirst electrode of the second data writing transistor N1 receive thedata signal Vd transmitted by the data line.

As shown in FIG. 6B, the data line connection portion 245 iselectrically connected with the first electrode 161 of the first datawriting transistor P1 through a via hole 223 in the second insulatinglayer 202, and the data line connection portion 245 is electricallyconnected with the first electrode 171 of the second data writingtransistor N1 through a via hole 224 in the second insulating layer 202.

For example, as shown in FIG. 6A, a plurality of data line connectionportions 245 are arranged at intervals in the first direction D1, forexample, located at a boundary of two sub-pixel rows. For example, twosub-pixels adjacent in the second direction D2 share one data lineconnection portion 245.

For the specific description of the data line connection portion, thedescription of the second data line connection portion in FIGS. 8A to 8Dbelow can be referred to.

Referring to FIGS. 6A and 6B, the first conductive layer 301 furtherincludes a connection electrode 318, and the connection electrode 318 iselectrically connected with the first electrode of the drivingtransistor N2 through a via hole 230 in the second insulating layer 202.

Referring to FIGS. 4A and 6B, the first conductive layer 301 furtherincludes connection electrodes 319 a, 319 b, 319 c, these connectionelectrodes are all arranged for biasing the substrates of thetransistors, for example, used for connecting the N-type substrate to afirst power voltage terminal to receive the first power voltage VDD(high voltage), or used for connecting the P-type substrate to a secondpower voltage terminal to receive the second power supply voltage VSS(low voltage), as a result, parasitic effects such as the substrate biaseffect can be avoided, and the stability of the circuit can be improved.

With referring to FIG. 4B, the connection electrodes 319 a and 319 b arerespectively electrically connected with the contact hole regions 411 aand 411 b in the second region (N-well region) 402 of the base substrate101 through via holes 262 a and 262 b in the second insulating layer202, the connection electrodes 319 a and 319 b are configured to beelectrically connected with the first voltage terminal VDD to bias theN-type substrate of the first data writing transistor P1. The connectionelectrode 319 c is electrically connected with the contact hole region400 a in the base substrate 101 through a via hole 262 c in the secondinsulating layer 202, and the connection electrode 319 c is configuredto be electrically connected with the second voltage terminal VSS tobias the P-type substrate where the second data writing transistor N1 islocated.

With referring to FIGS. 6A to 6B, the first conductive layer 301 furtherincludes a bias voltage line 250, the bias voltage line 250 is extendedalong the first direction D1, and is electrically connected with thegate electrode of the bias transistor N3 through a via hole 263 in thesecond insulating layer 202, to provide the second common voltage Vcom2.

With reference to FIGS. 4B and 6A to 6B, the first conductive layer 301further includes a power line 260, the power line 260 is extended alongthe first direction D1 and is used for transmitting the second powervoltage VSS. The power line 260 is electrically connected with the firstelectrode of the bias transistor N3 through a via hole 264 a in thesecond insulating layer 202 to provide the second power voltage VSS, andis electrically connected with a contact hole region 400 b in the basesubstrate 101 through a via hole 264 b in the second insulating layer202 to bias the P-type substrate where the second data writingtransistor N1 is located.

FIG. 7A shows a schematic diagram of the second conductive layer 302,FIG. 7B shows the second conductive layer 302 on the basis of the firstconductive layer 301, FIG. 7B further shows the via hole in the thirdinsulating layer 203, and the via hole in the third insulating layer 203is used to connect the pattern in the first conductive layer 301 and thepattern in the second conductive layer 302. For clarity, only four rowsand six columns of sub-pixels are shown in the figure, a dividing lineof two sub-pixel rows is further shown by a dotted line; in addition,FIG. 7B also correspondingly shows a position of the section line I-I′in FIG. 3A.

As shown in FIG. 7A, patterns of second conductive layers in twosub-pixels adjacent in the first direction D1 are symmetrical about asymmetry axis along the second direction D2; and patterns of secondconductive layers in two sub-pixels adjacent in the second direction D2are symmetrical about a symmetry axis along the first direction D1. Thepatterns of the second conductive layers will be exemplarily describedbelow by taking one sub-pixel as an example.

As shown in FIG. 7A, the second conductive layer 302 includes powerlines 270 a, 270 b, 280 a, and 280 b extended along the first directionD1, the power lines 270 a and 270 b are used to transmit the secondpower voltage VSS, and the power lines 280 a and 280 b are used totransmit the first power voltage VDD. The power lines 270 a, 280 a, 270b, and 280 b are alternately arranged one by one in the second directionD2.

With reference to FIGS. 3B, 7A, and 7B, the power line 270 a iselectrically connected with the power line 260 in the first conductivelayer 301 through a plurality of via holes 235 in the third insulatinglayer 203, so that a parallel structure is formed, the resistance of thewiring is effectively reduced; the plurality of via holes 235 arearranged along the first direction D1. For example, the power line 270 bis electrically connected with the third capacitor electrode 315 throughvia holes 236 in the third insulating layer 203 to provide the secondpower voltage VSS; for example, the plurality of via holes 236 arearranged along the second direction D2. For example, the power line 270b is also electrically connected with the third capacitor electrode 315(315 b) through via holes 267 in the third insulating layer 203 toprovide the second power voltage VSS; for example, the plurality of viaholes 267 are arranged along the second direction D2.

For example, in the second direction D2, a width of the power line 270 bis greater than a width of the power line 270 a, this is because thefirst portion and the second portion of the third capacitor electrode315 that is electrically connected with the power line 270 b both have alarger area, setting the power line 270 b to have a larger width canfacilitate the formation of a plurality of connection holes 236 and 267with the third capacitor electrode 315, so that the contact resistanceis effectively reduced.

With reference to FIGS. 7A and 7B, the power line 280 a is electricallyconnected with the connection electrode 318 in the first conductivelayer 301 through a via hole 237 in the third insulating layer 203, sothat the power line 280 a is connected with the first electrode of thedriving transistor N2 to provide the first power supply voltage VDD. Thepower line 280 b is electrically connected with the connection electrode319 a in the first conductive layer 301 through a via hole 238 in thethird insulating layer 203, so that the second region (N-well region)402 in the base substrate 101 is biased with a high voltage; forexample, the plurality of via holes 238 are arranged along the seconddirection D2.

For example, in the second direction D2, a width of the power line 280 bis greater than a width of the power line 280 a, this is because theconnection electrode 319 a electrically connected to the power line 280b has a larger size in the second direction D2, setting the power line280 b to have a larger width can facilitate the formation of a pluralityof connection holes 238 between the power line 280 b and the connectionelectrode 319 a, so that the contact region with the connectionelectrode 319 a is increased, and the contact resistance is effectivelyreduced.

For example, the second conductive layer 302 further includes aplurality of first scan lines 210 and a plurality of second scan lines220 extended along the first direction D1. For example, the scan line 11shown in FIG. 1A may be the first scan line 210 or the second scan line220.

With reference to FIG. 6A and FIG. 6B, the first scan line 210 iselectrically connected with the first scan line connection portion 311through a via hole 231 in the third insulating layer 203, and the secondscan line 220 is electrically connected with the second scan lineconnection portion 312 through a via hole 232 in the third insulatinglayer 203.

For the specific description of the first scan line and the second scanline, the description of FIGS. 10A-10B below may be referred to.

For example, with referring to FIG. 3B, FIG. 7A and FIG. 7B, the secondconductive layer 302 further includes a connection electrode 323, andthe connection electrode 323 is electrically connected with theconnection electrode 314 in the first conductive layer 301 through a viahole 239 in the third insulating layer 203, so that the connectionelectrode 323 is connected to the second terminal 132 of the resistancedevice 130. The connection electrode 323 is configured to beelectrically connected with the first electrode 121 of thelight-emitting element 120. For example, the number of the via hole 239is at least two.

For example, with referring to FIG. 7A and FIG. 7B, the secondconductive layer 302 further includes a connection electrode 324, andthe connection electrode 324 is electrically connected with theconnection electrode 319 b in the first conductive layer 301 through avia hole 265 in the third insulating layer 203, so that the connectionelectrode 324 is electrically connected with the contact hole region 411b in the second region (N-well region) 402 in the base substrate 101.

For example, with referring to FIG. 7A and FIG. 7B, the secondconductive layer 302 further includes a connection electrode 325, theconnection electrode 325 is electrically connected with the connectionelectrode 319 c in the first conductive layer 301 through a via hole 266in the third insulating layer 203, so that the connection electrode 325is electrically connected with the contact hole region 400 a in the basesubstrate 101.

For example, the connection electrode 325 is in a cross-shapedstructure. For example, the connection electrodes 324 and the connectionelectrodes 325 are alternately distributed in the first direction D1,and are located at a boundary of two sub-pixel rows.

For example, as shown in FIG. 7A, the second conductive layer 302further includes a data line connection portion 244. With referring toFIG. 7B, the data line connection portion 244 is electrically connectedwith the data line connection portion 245 in the first conductive layer301 through a via hole 233.

For example, as shown in FIG. 7A, a plurality of data line connectionportions 244 are arranged at intervals in the first direction D1, and aconnection electrode 324 or a connection electrode 325 is providedbetween every two adjacent data line connection portions 244.

For example, the data line connection portion 244 is located at aboundary between two sub-pixel rows. For example, two sub-pixelsadjacent in the second direction D2 share one data line connectionportion 244.

For example, with referring to FIGS. 7A and 7B, in the second directionD2, the data line connection portions 244 located in each column ofsub-pixels are alternately located on two sides of the data lineconnection portions 245, and are electrically connected with the firstend and the second end of the data line connection portions 245 throughvia holes 233 and 234, respectively, which is to connect the data lineconnection portions 245 to different data lines.

For a specific description of the data line connection portion, thedescription of the first data line connection portion in FIGS. 11A to11D below may be referred to.

FIG. 8A shows a schematic diagram of the third conductive layer 303,FIG. 8B shows the third conductive layer 303 on the basis of the secondconductive layer 302, FIG. 8B also shows the via holes in the fourthinsulating layer 204, and the via holes in the fourth insulating layer204 is used to connect the pattern in the second conductive layer 302with the pattern in the third conductive layer 303. For clarity, thefigures only show the conductive patterns corresponding to thesub-pixels in four rows and six columns, and a dividing line of two rowsof sub-pixels is shown in FIG. 8A with a dashed line; in addition, FIG.8B also correspondingly shows the position of the section line I-I′ inFIG. 3A.

For example, the third conductive layer 303 includes a plurality of datalines extended along the second direction D2, and the data line isconfigured to be connected with the first terminal of the data writingsub-circuit in the sub-pixel to provide the data signal Vd. For example,as shown in FIG. 8A, the plurality of data lines include a plurality offirst data lines 241 and a plurality of second data lines 242, the firstdata lines 241 and the second data lines 242 are alternately arrangedone by one along the first direction D1. For example, the data line 12shown in FIG. 1A may be the first data line 241 or the second data line242.

For example, the data line is divided into a plurality of data linegroups, each of the data line groups includes a first data line 241 anda second data line 242. For example, each sub-pixel column iscorrespondingly connected with a data line group, that is, with a firstdata line 241 and a second data line 242; that is, one column ofsub-pixels is driven by two data lines. This helps to reduce the load oneach data line, so that the driving ability of the data line isimproved, the signal delay is reduced, and the display effect isimproved.

Referring to FIG. 8B, the first data line 241 is electrically connectedwith the data line connection portion 244 which is between the first rowof sub-pixels and the second row of sub-pixels and in the secondconductive layer 302 shown in FIG. 7B through a via hole 403 in thefourth insulating layer 204, so as to provide the data signal to thefirst and second rows of sub-pixels; the second data line 242 iselectrically connected with the data line connection portion 244 whichis between the third row of sub-pixels and the fourth row of sub-pixelsand in the second conductive layer 302 shown in FIG. 7B through a viahole 404 in the fourth insulating layer 204, so as to provide the datasignal to the third and fourth rows of sub-pixels.

For the specific description of the first data line and the second dataline, the descriptions in FIGS. 11A-11D below may be referred to. Forthe convenience of comparison, FIG. 8B shows the positions correspondingto the section lines II-II′ and III-III′ in FIG. 11B.

For example, the third conductive layer 303 includes power lines 330 and340 extended along the second direction D2. The power line 330 isconfigured to transmit the first power voltage VDD, and the power line340 is configured to transmit the second power voltage VSS. As shown inFIG. 8A, the power line 330 and the power line 340 are alternatelyarranged one by one in the first direction D1.

Referring to FIG. 8B, the power line 330 is electrically connected withthe power lines 280 a and 280 b in the second conductive layer 302through via holes 405 and 406 in the fourth insulating layer 204,respectively, so that a meshed power line structure for transmitting thefirst power voltage is formed. This structure helps to reduce theresistance on the power line, so that the voltage drop on the power lineis reduced, which helps to evenly deliver the first power voltage VDD toeach of the sub-pixels of the display substrate. The power line 330 isalso electrically connected with the connection electrode 324 (referringto FIG. 7A) in the second conductive layer 302 through a via hole 407 inthe fourth insulating layer, so that the power line 330 is electricallyconnected with the contact hole region 411 b in the second region 402(N-well region) in the base substrate 101, to bias the N-type substratewhere the first data writing transistor P1 and the resistance device 130are located.

Referring to FIG. 8B, the power line 340 is electrically connected withthe power lines 270 a and 270 b in the second conductive layer 302through a via hole 408 and a via hole 409 in the fourth insulating layer204, respectively, so that a meshed power line structure fortransmitting the second power supply voltage is formed. The meshed powerline structure helps to reduce the resistance on the power line, so thatthe voltage rise on the power line is reduced, which helps to evenlydeliver the second power voltage VSS to each of the sub-pixels of thedisplay substrate. The power line 340 is also electrically connectedwith the connection electrode 325 (referring to FIGS. 3B and 6A) in thesecond conductive layer 302 through a via hole 412 in the fourthinsulating layer, so that the power line 340 is electrically connectedwith the contact hole region 400 a in the base substrate 101, to biasthe P-type substrate where the transistors N1-N3 are located.

As shown in FIG. 8A, the third conductive layer 303 further includes aconnection electrode 333, the connection electrode 333 is locatedbetween the first data line 241 and the second data line 242 in a dataline group. As shown in conjunction with FIG. 7B, the connectionelectrode 333 is electrically connected with the power line 270 b in thesecond conductive layer through a via hole 413 in the fourth insulatinglayer, for example, the number of the via 413 is at least two, so thatthe connection electrode 333 can fully contact with the power line 270 bto reduce the contact resistance. The parallel connection electrode 333arranged on the power line 270 b can help to reduce the resistance onthe power line 270 b, so that the voltage rise on the power line isreduced, which helps to evenly deliver the second power voltage VSS toeach of the sub-pixels of the display substrate.

As shown in FIG. 3B, FIG. 8A and FIG. 8B, the third conductive layer 303further includes a connection electrode 334, the connection electrode334 is electrically connected with the connection electrode 323 in thesecond conductive layer 302 through a via hole 414 in the fourthinsulating layer, so that the connection electrode 334 is connected witha second terminal 132 of the resistance device 130. The connectionelectrode 334 is configured to be electrically connected with the firstelectrode 121 of the light-emitting element 120. For example, the numberof the via holes 414 is at least two.

As shown in conjunction with FIG. 8A and FIG. 8B, the third conductivelayer 303 further includes a shielding electrode 341, for example, theshielding electrode 341 is extended along the second direction D2, theshielding electrode 341 is located between a first data line 241 and asecond data line 242 of a data line group, for example, the first dataline 241 and the second data line 242 are symmetrically arranged on bothsides of the shielding electrode 341. The shielding electrode 341 isarranged between the two data lines to play a role of shielding andprevent signals in the two data lines from interfering with each other.For example, the shielding electrode 341 is configured to receive aconstant voltage to improve the shielding ability. In this embodiment,the shielding electrode 341 is configured to receive the second powervoltage VSS.

For example, the display substrate comprises a plurality of shieldingelectrodes 341, the plurality of shielding electrodes 341 are arrangedin a one-to-one correspondence with the plurality of data line groups,and each shielding electrode is between the first data line and thesecond data line of the corresponding data line group.

As shown in FIG. 8A, the connection electrode 333, the connectionelectrode 334, and the shielding electrode 341 are arranged in thesecond direction D2, and are located between the first data line 241 andthe second data line 242; the connection electrode 333, the connectionelectrode 334, and the shielding electrode 341 constitute a shieldingwall, which plays a role of shielding in an entire extension range ofthe first data line 241 and the second data line 242, to prevent thesignals in the two data lines from interfering with each other.

For example, as shown in FIG. 8A, the connection electrode 333 and theshielding electrode 341 are located on two sides of the connectionelectrode 334 respectively, and are spaced apart from the connectionelectrode 334. The connection electrode 333 is provided with aprotruding portion 333 a at one end close to the connection electrode334, the protruding portion 333 a is in an L shape, a first branch ofthe protruding portion 333 a is extended along the first direction D1,and is connected with the main body of the connection electrode 333, asecond branch of the protruding portion 333 a is extended along thesecond direction D2 and the direction approaching the connectionelectrode 334, the second branch is overlapped with a gap between theconnection electrode 333 and the connection electrode 334 in the firstdirection D1, so that the shielding effect is improved, and the signalcrosstalk between the two data lines is further avoided.

Similarly, the shielding electrode 341 is provided with an L-shapedprotruding portion 341 a at one end close to the connection electrode334, and the L-shaped protruding portion 341 a is used for furthershielding the gap between the shielding electrode 341 and the connectionelectrode 334, to improve the shielding effect.

In this way, the shielding wall achieves complete shielding in thesecond direction D2, and the first data line 241 and the second dataline 242 have no area directly facing each other in the first directionD1, so that a better signal shielding effect is achieved, a betterstability of the display data is provided, and the display effect isimproved.

FIG. 9A shows a schematic diagram of the fourth conductive layer 304,FIG. 9B shows the fourth conductive layer 304 on the basis of the thirdconductive layer 303, and FIG. 9B also shows via holes in the fifthinsulating layer 205, the via holes in the fifth insulating layer 205are used to connect patterns in the third conductive layer 303 withpatterns in the fourth conductive layer 304. For clarity, only four rowsand six columns of sub-pixels are shown in the figure, a dividing lineof two rows of sub-pixels is shown by a dotted line; in addition, FIG.9B also correspondingly shows the position of the section line I-I′ inFIG. 3A.

For example, the fourth conductive layer 304 includes power lines 350and 360 extended along the second direction D2. The first power line 350is used to transmit the first power voltage VDD, and the power line 360is used to transmit the second power voltage VSS. As shown in FIG. 9A,the power lines 350 and the power lines 360 are alternately arranged oneby one in the first direction D1.

For example, the plurality of power lines 350 and the plurality of powerlines 330 are arranged in one-to-one correspondence, and the pluralityof power lines 360 and the plurality of power lines 340 are arranged inone-to-one correspondence; in a direction perpendicular to the basesubstrate 101, each power line 350 and the corresponding power line 330overlap with each other and are electrically connected with each other(for example, in parallel), each power line 360 and the correspondingpower line 340 are overlapped and are electrically connected with eachother (for example, in parallel). As a result, the resistance on thepower line is reduced, and the display uniformity is improved.

Referring to FIG. 9B, the power line 350 is electrically connected withthe corresponding power line 330 through a via hole 251 in the fifthinsulating layer 205, and the power line 360 is electrically connectedwith the corresponding power line 340 through a via hole 252 in thefifth insulating layer. For example, the numbers of the via holes 251and 252 are at least two respectively.

With reference to FIGS. 9A and 9B, the fourth conductive layer 304further includes a connection electrode 342, the connection electrode342 is electrically connected with the connection electrode 333 in thethird conductive layer 303 through a via hole 253 in the fifthinsulating layer, for example, the number of via holes 253 is at leasttwo, so that the connection electrode 342 can fully contact theconnection electrode 333 to reduce the contact resistance. Providing theconnection electrode 342 helps to further reduce the resistance on thepower line 270 b, so that the voltage rise on the power line is reduced,which helps to evenly deliver the second power supply voltage VSS toeach of the sub-pixels of the display substrate.

Combining FIG. 3B, FIG. 9A with FIG. 9B, the fourth conductive layer 304further includes a connection electrode 343, the connection electrode343 is electrically connected with the connection electrode 334 in thethird conductive layer 303 through a via hole 254 in the fifthinsulating layer, so that the connection electrode 343 is connected to asecond terminal 132 of the resistance device 130. The connectionelectrode 343 is used for electrical connection with a first electrode121 of the light-emitting element 120. For example, the number of thevia holes 254 is at least two.

Combining FIG. 9A with FIG. 9B, the fourth conductive layer 304 furtherincludes a connection electrode 344, and the connection electrode 344 iselectrically connected with the shielding electrode 341 in the thirdconductive layer 303 through a via hole 255 in the fifth insulatinglayer. As shown in FIG. 9A, the fourth conductive layer 304 furtherincludes a connection portion 345, which connects the connectionelectrode 344 to the power line 360 directly adjacent to the connectionelectrode 344.

For example, as shown in FIG. 9A, the connection electrodes 344 locatedon two sides of the power line 360 are symmetrically arranged about thepower line 360, the power line 360, the connection electrodes 344 on twosides of the power line 360, and the corresponding connection portions345 of the connection electrodes are connected with each other as anintegral structure. In this way, the power line 360 can provide thesecond power voltage VSS to the shielding electrode 341, to improve theshielding ability of the shielding electrode.

For example, each via hole may be additionally filled with a conductivematerial (such as tungsten) to conduct electricity.

FIG. 9B also shows a contact hole region 256 of the connection electrode343, and the contact hole region 256 is used to electrically connectwith the first electrode 121 of the light-emitting element 120.

It should be noted that along the section line I-I′, a part of theconnection electrode 343 in the contact hole region 256 and a part ofthe connection electrode 343 corresponding to the via hole 254 are notcontinuous (as shown in the region F in FIG. 9B); however, for theconvenience of description, the contact hole region 256 and the via hole254 are shown on the continuous connection electrode 343 in thecross-sectional schematic diagram shown in FIG. 3B, which is consistentwith the actual situation. For example, as shown in FIG. 3B, the displaysubstrate 10 further includes a sixth insulating layer 206, and a viahole 257 is formed in the sixth insulating layer 206 corresponding to acontact hole region 256 of the connection electrode 343, the via hole257 is filled with a conductive material (such as tungsten), then apolishing process (such as chemical mechanical polishing) is performedto form a flat surface, which is used to form the light-emitting element120.

For example, the number of the via hole 257 is at least two.

For example, as shown in FIG. 3B, the numbers of the contact holeregions for electrical connection on the connection electrodes 314, 323,334, and 343 connected with the first electrode 121 of thelight-emitting element 120 are at least two, respectively, the contactresistance between the connection electrodes is reduced, in turn, theconnection resistance between the resistance device 130 and the firstelectrode 121 of the light-emitting element 120 is reduced, so that thevoltage drop on a transmission path of the data signal from theresistance device 130 to the first electrode 121 is reduced, theproblems such as color shift and display unevenness caused by the lossof anode potential due to the voltage drop are alleviated, and thedisplay effect is improved.

For example, as shown in FIG. 3B, in the direction perpendicular to thebase substrate 101, the via holes 257, 254, and 414 corresponding to thefirst electrode 121 of the light-emitting element 120 do not overlapwith each other. In the direction perpendicular to the substrate,stacking of the via holes leads to poor connection, disconnection orunevenness at the positions of the via holes, and this arrangementimproves the electrical connection quality of the first electrode 121 ofthe light-emitting element 120, and improves the display effect.

As shown in FIG. 3B, the light-emitting element 120 includes a firstelectrode 121, a light-emitting layer 123, and a second electrode 122sequentially disposed on the sixth insulating layer 206. For example,the first electrode 121 and the second electrode 122 are the anode andthe cathode of the OLED, respectively. For example, a plurality of firstelectrodes 121 are arranged at intervals in a same layer, and correspondto the plurality of sub-pixels in a one-to-one correspondence. Forexample, the second electrode 122 is a common electrode, and is providedin an entire surface of the display substrate 10.

For example, as shown in FIG. 3B, the display substrate further includesa first encapsulation layer 124, a color filter layer 125, and a coverplate 126 on a side of the light-emitting element 120 away from the basesubstrate 101.

For example, the first encapsulation layer 124 is configured to seal thelight-emitting element to prevent external moisture and oxygen frompenetrating into the light-emitting element and the pixel circuit andfrom causing damage to the device. For example, the encapsulation layer124 includes an organic thin film or a structure in which an organicthin film and an inorganic thin film are alternately stacked. Forexample, a water-absorbing layer may be arranged between theencapsulation layer 124 and the light-emitting element, and isconfigured to absorb residual water vapor or sol in the pre-productionprocess of the light-emitting element. The cover plate 126 is, forexample, a glass cover plate.

For example, as shown in FIG. 3B, the display substrate may furtherinclude a second encapsulation layer 127 located between the colorfilter layer 125 and the cover plate 126, and the second encapsulationlayer 127 can protect the color filter layer 125.

For example, the light-emitting element 120 is configured to emit whitelight, and combines the color filter layer 125 to realize a full-colordisplay.

In other examples, the light-emitting element 120 is configured to emitlight of three primary colors, in this situation, the color filter layer125 is not necessary. The embodiment of the present disclosure does notlimit the manner in which the display substrate 10 realizes full-colordisplay.

The following Table A exemplarily shows thickness ranges and examplevalues of the first insulating layer to the sixth insulating layer,Table B exemplarily shows thickness ranges and example values of thefirst conductive layer to the fourth conductive layer, Table Cexemplarily shows sizes and example values of the via hole VIA2 in thesecond insulating layer, the via hole VIA5 in the third insulatinglayer, the via hole VIA4 in the fourth insulating layer, the via holeVIM in the fifth insulating layer, and the via hole VIA6 in the sixthinsulating layer, and Table D exemplarily shows example values of thechannel width, length, and respective width-to-length ratio of eachtransistor (N1 to N4, and P1); however, this is not a limitation to thepresent disclosure.

TABLE A Numerical Exemplary Film Layer Range (Å) Value (Å) The firstinsulating layer 201 30~34 32 The second insulating layer 20210000~14000 12000 The third insulating layer 203 6500~7500 7000 Thefourth insulating layer 204 6500~7500 7000 The fifth insulating layer205 6500~7500 7000 The sixth insulating layer 206 6500~7500 7000

TABLE B Numerical Exemplary Film Layer Range (Å) Value (Å) The firstconductive layer 201 4500~5500 5000 The second conductive layer 2024500~5500 5000 The third conductive layer 203 4500~5500 5000 The fourthconductive layer 204 4500~5500 5000

TABLE C Numerical Exemplary Via Hole Range (um) Value (um) VIA2 0.2-0.30.22 VIA3 0.2-0.3 0.26 VIA4 0.2-0.3 0.26 VIA5 0.2-0.3 0.26 VIA6 0.3-0.40.36

TABLE D Transistor W(um)/L(um) P1 0.6/0.6 N1 0.6/0.6 N2 1.5/0.6 N31.02/0.76

For example, as shown in Table A, among the first insulating layer tothe sixth insulating layer, a thickness of the first insulating layer201 is the smallest, and the thickness of the second insulating layer202 is the greatest. This is because the first insulating layer 201includes the gate insulating layer of each transistor, and furtherincludes the dielectric layer 104 of the storage capacitor Cst,providing the thickness of the first insulating layer 201 to be smallercan help to improve the gate control ability of the transistor to obtaina larger storage capacitor. In addition, the second insulating layer 202serves as a field oxide layer, setting the second insulating layer 202thicker helps an electrical isolation between the transistors. Forexample, the thicknesses of the third insulating layer 203, the fourthinsulating layer 204, the fifth insulating layer 205, and the sixthinsulating layer 206 are the same or similar; for example, the thicknessof the second insulating layer 202 is 1.5 to 2 times of the thickness ofthe third insulating layer 203/the fourth insulating layer 204/the fifthinsulating layer 205/the sixth insulating layer 206.

For example, a planar shape of each of the via holes can be arectangular (such as square) or a circular, the size in Table Crepresents an average side length or an aperture of the rectangle. Forexample, as shown in Table C, the plurality of via holes in each of theinsulating layers are provided with a same size. For example, among thesecond insulating layer to the sixth insulating layer, the size of thevia hole in the sixth insulating layer 206 is the largest. This isbecause the sixth insulating layer 206 is closest to the light-emittingelement, during the driving process of the light-emitting element, thecurrent gathers up from the transistor in the bottom layer to thelight-emitting element, so that the size of the via hole in the sixthinsulating layer 206 is the largest, so as to transmit a largerconvergent current.

For example, a distance between the first data writing transistor P1 andthe second data writing transistor N1 ranges from 0.4 to 0.45 microns,for example, 0.42 microns, which helps to increase the pixel density. Asshown in FIG. 4B, the distance D0 is a distance between the sides of thegate electrode 160 of the first data writing transistor P1 and the gateelectrode 170 of the second data writing transistor N1 that are closestto each other.

For example, as shown in FIG. 4B, an equivalent length of the resistancedevice 130 is 4.4 microns, and an average width of the resistance device130 is 0.42 microns.

For example, as shown in FIG. 4B, an effective capacitance area of thestorage capacitor Cst is 20 square microns, that is, an effective areaof the polysilicon layer 102 for forming the storage capacitor Cst is 20square microns. For example, an area ratio of the storage capacitor Cstin each sub-pixel is 20%-35%, for example, 27%. The display substrateprovided by the embodiments of the present disclosure can effectivelyincrease the area ratio of the storage capacitor through reasonablelayout, so that the capacitance value is increased.

For example, a thickness of the polysilicon layer 102 is 200 nanometers.

At least one embodiment of the present disclosure further provides apixel structure, and the pixel structure includes a base substrate, apixel row located on the base substrate, and a first scan line and asecond scan line. The pixel row includes a plurality of sub-pixelslocated on the base substrate and the plurality of sub-pixels arearranged along a first direction; the first scan line and the secondscan line extend along the first direction, and each of the sub-pixelsincludes a pixel circuit, the pixel circuit includes a data writingsub-circuit, a storage sub-circuit, and a driving sub-circuit. The datawriting sub-circuit includes a first control electrode, a second controlelectrode, a first terminal and a second terminal, the first controlelectrode and the second control electrode of the data writingsub-circuit are respectively configured to receive the first controlsignal and the second control signal, the first terminal of the datawriting sub-circuit is configured to receive a data signal, the secondterminal of the data writing circuit is electrically connected with thefirst terminal of the storage sub-circuit, and is configured to transmitthe data signal to the first terminal of the storage sub-circuit inresponse to the first control signal and the second control signal, thedriving sub-circuit includes a control terminal, a first terminal and asecond terminal, the control terminal of the driving sub-circuit iselectrically connected with the first terminal of the storagesub-circuit, the first terminal of the driving sub-circuit is configuredto receive the first power voltage, the second terminal of the drivingsub-circuit is used to connect with the light-emitting element, thedriving sub-circuit is configured to drive the light-emitting element toemit light in response to the voltage at the first terminal of thestorage sub-circuit; the first scan line is electrically connected withthe first control electrode of the data writing circuit of the pluralityof sub-pixels to provide the first control signal; the second scan lineis electrically connected with the second control electrode of the datawriting circuit of the plurality of sub-pixels to provide the secondcontrol signal; the first scan line and the second scan line areprovided with a same resistance, and an area of an orthographicprojection of the first scan line on the base substrate is the same asan area of an orthographic projection of the second scan line on thebase substrate.

In some examples, for example, the first scan line and the second scanline refer to a portion, which is in the display region, of a wiringthat transmits the corresponding control signal from the scan drivingcircuit to each of the sub-pixels, so that in a case of comparing theresistances and the areas, the portion of the wiring outside the displayregion can be ignored.

In other examples, for example, the first scan line and the second scanline may also represent all portions of the wiring that transmits thecorresponding control signal from the scan driving circuit to each ofthe sub-pixels and include the portions of the wiring located in thedisplay region and the non-display region, for example, the portion Sshown in FIG. 1A. For example, the first control signal SEL and thesecond control signal SEL_B can be output by a same gate driving circuitunit (such as a GOA unit).

With this arrangement, it can be ensured that a resistance-capacitance(RC) load on the first scan line is the same as a resistance-capacitance(RC) load on the second scan line. Referring to IA, in a case that thecontrol signal is transmitted from the scan driving circuit 14 to eachof the sub-pixels, a proportion of the portion of the scan line 11 (forexample, the first scan line and the second scan line) outside thedisplay region (shown by the dashed frame) is relatively small, so thatthe RC loads of the portions of the scan lines 11 in the display regionare provided to be the same can improve the synchronization of the firstcontrol signal SEL and the second control signal SEL_B; with referenceto FIG. 2C, for example, in a case of entering from the data writingstage 1 to the light-emitting stage 2, the above setting can make arising edge of the first control signal SEL and a falling edge of thesecond control signal SEL_B occur at the same time. Therefore, theanti-interference performance of the pixel circuit is improved.

The present disclosure further provides a display substrate including aplurality of pixel structures, the plurality of pixel rows in theplurality of pixel structures are arranged in the second direction, andthe first direction intersects the second direction, so that theplurality of sub-pixels of the plurality of pixel rows are a pluralityof pixel columns.

It should be noted that the pixel structure provided by the embodimentof the present disclosure can be applied to the display substrate 10provided by any one of the foregoing embodiments. However, the pixelstructures provided by the embodiments of the present disclosure are notlimited to a silicon-based display substrate, for example, may also beapplied to a glass substrate or a flexible substrate, in this case, thelight-emitting element may also be, for example, in a bottom emissionstructure or a double-side emission structure.

FIG. 10A shows a schematic diagram of a display substrate provided by atleast one embodiment of the present disclosure. For clarity, the figureshows two rows and six columns of sub-pixels, namely only two abovepixel structures. Compared with the display substrate illustrated inFIG. 3A, the display substrate omits the third conductive layer and thefourth conductive layer. In the following, the arrangement of the firstscan line and the second scan line in the display substrate and thepixel structure provided by the embodiment of the present disclosurewill be exemplarily described with reference to FIG. 10A, but theembodiments of the present disclosure are not limited thereto.

For example, as shown in FIG. 10A, each sub-pixel row is respectivelycorrespondingly connected with a first scan line 210 and a second scanline 220, but the present disclosure is not limited thereto.

For example, the display substrate 10 further includes a plurality offirst scan line connection portions 311 electrically connected with thefirst scan line 210 and a plurality of second scan line connectionportions 312 electrically connected with the second scan line 220; thefirst scan line 210 is electrically connected with the first controlelectrode (that is, the gate electrode of the first data writingtransistor) of the data writing circuit of a row of sub-pixels throughthe plurality of first scan line connection portions 311, and the secondscan line 220 is electrically connected with the second controlelectrode (that is, the gate electrode of the second data writingtransistor) of the data writing circuit of the row of sub-pixels throughthe plurality of second scan line connection portions 312.

For example, the first scan line 210 and the second scan line 220 arearranged in a same layer and insulated from each other and are made of asame material.

For example, the plurality of first scan line connection portions 311and the plurality of second scan line connection portions 312 arearranged at intervals in a same layer and are made of a same material,and are located in a different conductive layer from the first scan line210 and the second scan line 220.

FIG. 10B shows an enlarged schematic diagram of the region E in thedashed frame region in FIG. 10A, for clarity, the figure only shows thegate electrodes of the first data writing transistor P1 and the seconddata writing transistor N1, the first scan lines 210, and the secondscan lines 220, and the first scan line connection portions 311 and thesecond scan line connection portions 312. For the convenience ofcomparison, the position of the E region is also correspondingly shownin FIG. 7B. FIG. 10C shows a cross-sectional schematic diagram of FIG.10B along a section line V-V′.

For example, the lengths and the line widths of the first scan line 210and the second scan line 220 are respectively the same.

For example, the first scan line connection portion 311 and the secondscan line connection portion 312 are alternately arranged in the firstdirection D1, and the extension direction of the first scan lineconnection portion 311 and the extension direction of the second scanline connection portions 312 are different from the first direction D1.The orthographic projection of the first scan line connection portions311 on the base substrate intersects with both the orthographicprojections of the first scan line 210 and the second scan line 220 onthe base substrate. The orthographic projection of the second scan lineconnection portions 312 on the base substrate intersect with both theorthographic projections of the first scan line 210 and the second scanline 220 on the base substrate. For example, both the first scan lineconnection portion 311 and the second scan line connection portion 312are linear structures, and extend along the second direction D2.

For example, a sum of areas of orthographic projections of the pluralityof first scan line connection portions 311 on the base substrate is thesame as a sum of areas of orthographic projections of the plurality ofsecond scan line connection portions 312 on the base substrate.Therefore, the parasitic capacitances on the plurality of first scanline connection portions 311 and the parasitic capacitances on theplurality of second scan line connection portions 312 are the same.

This setting makes the loads caused by the parasitic capacitances of thewirings (including the corresponding scan lines and connection portions)are the same while the first control signal and the second controlsignal respectively transmitting from the first scan line and the secondscan line to the data writing sub-circuit, and the synchronization ofthe first control signal and the second control signal is furtherimproved.

For example, a size of the first data writing transistor P1 electricallyconnected with the first scan line and a size of the second data writingcircuit N1 electrically connected with the second scan line are thesame, thus the loads generated on respective scan lines are also thesame, and the synchronization of the first control signal and the secondcontrol signal is further improved, so that the anti-interferenceperformance of the circuit is improved.

For example, each of the plurality of first scan line connectionportions 311 has a same length along the second direction D2, and eachof the plurality of first scan line connection portions 311 has a sameline width. Each of the plurality of second scan line connectionportions 312 has a same length in the second direction D2, and each ofthe plurality of second scan line connection portions 312 has a sameline width.

For example, the first scan line 210 is electrically connected with thefirst scan line connection portion 311 through the via holes 231, thesecond scan line 220 is electrically connected with the second scan lineconnection portions 312 through the via holes 232, and the via hole 231and the via hole 232 are both located in the third insulating layer 203.

For example, as shown in FIG. 10B, the first control electrode group 191formed by the first control electrodes of two sub-pixels adjacent in thefirst direction D1 and the second control electrode group 192 formed bythe second control electrodes of the two sub-pixels adjacent in thefirst direction D1 are alternately arranged one by one in the firstdirection D1.

For example, as shown in FIG. 10B, the first scan line connectionportion 311 is electrically connected with the first control electrodegroup 191 or the first control electrode through the via hole 221, thesecond scan line connection portion 312 is electrically connected withthe second control electrode group 192 or the second control electrodethrough the via hole 222. For example, the plurality of first scan lineconnection portions 311 are electrically connected with the plurality offirst control electrode groups 191 in a one-to-one correspondence, andthe plurality of second scan line connection portions 312 areelectrically connected with the plurality of second control electrodegroups 192 in a one-to-one correspondence.

For example, the first scan lines 210 and the second scan lines 220 arelocated on a same side of the plurality of first control electrodegroups 191 and the plurality of second control electrode groups 192, andthe first scan lines 210 are closer to the plurality of first controlelectrode groups 191 and the second control electrode groups 192.

For example, as shown in FIG. 10B, in a direction perpendicular to thebase substrate, the first scan lines 210 intersect with both the firstscan line connection portion 311 and the second scan line connectionportion 312, and the second scan lines 220 intersect with both the firstscan line connection portion 311 and the second scan line connectionportion 312. The via hole 231 is located at the intersection of thefirst scan line 210 and the first scan line connection portion 311, andthe via hole 232 is located at the intersection of the second scan line220 and the second scan line connection portion 312.

For example, as shown in FIG. 10B, the via hole 231 and the via hole 232are alternately arranged in the first direction D1 and are staggered inthe second direction, and the via hole 231 is closer to the plurality ofthe first control electrode groups 191 and the plurality of the secondcontrol electrode groups 192 than the via hole 232.

As shown in FIG. 10B, one end of the second scan line connection portion312 is electrically connected with the corresponding second scan line220 through the via hole 232, and the other end of the second scan lineconnection portion 312 is electrically connected with the second controlelectrode or the second control electrode group to be connected throughthe via hole 222. The first scan line 210 passes between the via hole232 and the via hole 222.

For example, as shown in FIG. 10B, the first scan line connectionportion 311 includes a main body portion 321 and an extension portion322, the extension portion 322 is a portion extended from the main bodyportion 321 and away from the first scan line 20 along the seconddirection. The main body portion 321 is used to electrically connect thefirst scan line connection portion 311 and the first control electrodeor the first control electrode group, and the main body portion 321 islocated between the first scan line 210 and the connected first controlelectrode or first control electrode group in the second direction D2;the extension portion 322 is located at a side of the first scan lines210 away from the first control electrode or first control electrodegroup connected with the extension portion 322 in the second directionD2.

Here, the extension portion 322 serves as a dummy structure, and doesnot actually play a role of electrical connection, the extension portion322 is arranged to make the length and the area of the first scan lineconnection portion 311 respectively the same as the length and the areaof the second scan line connection portion 312, thereby forming the samecapacitive load on the first scan line connection portion 311 and on thesecond scan line connection portion 312.

For example, as shown in FIG. 10B, the via hole 221 is located in themiddle of the first control electrode group 191, and the via hole 222 islocated in the middle of the second control electrode group 192. The twofirst control electrodes in the first control electrode group 191 areaxisymmetric with respect to the first scan line connection portion 311correspondingly connected with the first control electrode group 191 tothe first control electrode group and an extension line of the firstscan line connection portion 311; and the two second control electrodesin the second control electrode group 192 are axisymmetric with respectto the second scan line connection portion 312 correspondingly connectedto the second control electrode group and an extension line of thesecond scan line connection portion 312.

Referring to FIG. 10A, the first scan lines 210 correspondinglyconnected with two adjacent pixel rows are symmetrical about a symmetryaxis along the first direction D1, and the second scan lines 220corresponding to two adjacent pixel rows are symmetrical about asymmetry axis along the first direction D1.

The display substrate 10 includes a plurality of data lines extendedalong the second direction D2, and the data line is used to connect withthe first terminal of the data writing sub-circuit in the sub-pixel toprovide the data signal Vd.

FIG. 11A shows a schematic diagram of a display substrate provided byother embodiments of the present disclosure, the figure shows aschematic diagram of a data line of a display substrate provided by atleast one embodiment of the present disclosure, but the embodiments ofthe present disclosure are not limited to this case.

With reference to FIG. 8A, the data lines are divided into a pluralityof data line groups, each of the plurality of data line groups includesa first data line 241 and a second data line 242. The plurality of dataline groups are electrically connected with the plurality of pixelcolumns in a one-to-one correspondence to provide the data signal Vd.Each of the sub-pixel columns is electrically connected with a firstdata line 241 and a second data line 242 respectively; that is, onecolumn of sub-pixels is driven by two data lines.

For example, as shown in FIG. 11A, each sub-pixel column iscorrespondingly connected with two data lines, that is, a first dataline 241 and a second data line 242. For each column of sub-pixels, twosub-pixels in an n-th pixel row and in an (n+1)-th pixel row in theplurality of pixel rows constitute a pixel group 240, and share one dataline, where n is an odd number or an even number greater than 0. Foreach column of sub-pixels, in the second direction D2, the N-th pixelgroup 240 is connected with the first data line 241, and the (N+1)-thpixel group 240 is connected with the second data line 242, where N is anatural number, that is, in the second direction D2, the pixel group 240is alternately connected with the first data line 241 and the seconddata line 242, the odd-numbered pixel groups share one data line, andthe even-numbered pixel groups share another data line.

By setting two data lines to drive a sub-pixel column, the load on eachdata line can be reduced, so that the driving ability of the data lineis improved, the signal delay is reduced, and the display effect isimproved.

Since the display substrate provided by the embodiment of the presentdisclosure is symmetry in structure, the layout of the signal line canbe matched with the driving mode of the above-mentioned data line, toachieve the effect of optimized design.

For example, with reference to FIG. 4A, the first electrodes of twofirst data writing transistors P1 in a pixel group 240 are connectedwith each other as an integral structure (see region A1), and the firstelectrodes of two second data writing transistors N1 are connected witheach other as an integral structure (see region A2), thus in accordancewith the above-mentioned driving method of the data line, a connectingvia hole can be provided for the first electrodes of the integratedstructure to be connected with the data line in a limited contactregion, so that the data line is electrically connected with the twofirst data writing transistors P1 or the two second data writingtransistors N2 in the pixel group 240, instead of being connected withthe two transistors through a via hole separately. This not only savesthe process, but also makes the layout design more compact under therestriction of the design rules, and the resolution of the displaysubstrate is improved.

FIG. 11B shows the connection structure of the data lines in twoadjacent pixel groups 240, for clarity, only partial diagrams of thesub-pixels in each of the pixel groups connected with the first dataline and the second data line are selectively shown, and the partialdiagrams corresponding to the two pixel groups are put together, to showthe continuous relationship of signal lines, where the dotted line showsa dividing line of the two pixel groups.

As shown in FIG. 11B, in a direction perpendicular to the basesubstrate, the first data line 241 overlaps with the first data writingtransistor P1, and is electrically connected with the first electrodesof two adjacent first data writing transistors P1 in one pixel row 240;and the second data line 242 overlaps with the second data writingtransistor N1, and is electrically connected with the first electrodesof two adjacent second data writing transistors N1 in one pixel group240.

For example, as shown in FIG. 11B, in the direction perpendicular to thebase substrate, the first data line 241 overlaps with the gate electrode160 of the first data writing transistor P1, the second data line 242overlaps with the gate electrode 170 of the second data writingtransistor N1; that is, both the first data line 241 and the second dataline 242 pass through the pixel region, and no additional pixel space isoccupied, to improve the space utilization.

FIG. 11C and FIG. 11D respectively show a cross-sectional schematicdiagram of FIG. 11B along the section lines II-II′ and III-III′, and thesection lines are, for example, along the first direction D1. Forclarity, the figures only show the structure that is electricallyconnected with the data line, and other structures are omitted. As shownin FIGS. 11C and 11D, the first data line 241 and the second data line242 are located in the third conductive layer 303, and are electricallyconnected with the corresponding first data line connection portions 244in the second conductive layer 302 through the via holes 403 and 404 inthe fourth insulating layer 204, respectively. In the directionperpendicular to the base substrate, the first data line connectionportion 244 overlaps with the corresponding first data line 241 or thesecond data line 242 respectively. The first data line connectionportion 244 is electrically connected with the second data lineconnection portion 245 in the first conductive layer 301 through the viaholes 233 and 234 in the third insulating layer 203, the second dataline connection portion 245 is electrically connected with the firstelectrode 161 of the first data writing transistor P1 and the firstelectrode 171 of the second data writing transistor N1 through the viaholes 223 and 224 in the second insulating layer 202, respectively, sothat the data signal is transmitted to the transistors.

Since the first electrodes of the two adjacent first data writingtransistors P1 and the first electrodes of the two adjacent second datawriting transistors N1 in one pixel row are respectively connected as anintegral structure, and the second data line connection portion 245electrically connects the first electrode of the first data writingtransistor P1 with the first electrode of the second data writingtransistor N1 in one sub-pixel, thus, the second data line connectionportion 245 electrically connects the first electrodes 161 of the twofirst data writing transistors P1 and the first electrodes 171 of thetwo second data writing transistors N1 of two sub-pixels adjacent in thesecond direction D2 in one sub-pixel group, and the second data lineconnection portion 245 is connected to the corresponding first data line241 or the corresponding second data line 242 through the correspondingfirst data line connection portion 244. It can be seen that the firstelectrodes of the four transistors only need to be provided with one viahole in both the third insulating layer and the fourth insulating layerto realize electrical connection with the data line, the layout space isgreatly saved, and the space utilization is improved.

As shown in FIGS. 11B to 11D, for example, the first data line 241 andthe second data line 242 are symmetrically arranged on two sides of thesecond data line connection portion 245.

For example, as shown in FIGS. 11C and 11D, the third conductive layerfurther includes a shielding electrode 341, the shielding electrode 341is located between the first data line 241 and the second data line 242,for example, the first data line 241 and the second data line 242 aresymmetrically arranged on two sides of the shielding electrode 341. Theshielding electrode 341 is arranged between the two data lines to play arole of shielding, so as to prevent signals in the two data lines frominterfering with each other. For example, the shielding electrode 341 isconfigured to receive a constant voltage to improve the shieldingability; for example, the shielding electrode 341 is configured toreceive the second power voltage.

For example, as shown in FIG. 4A, the first electrodes 161 of the firstdata writing transistors P1 of two sub-pixels 100 adjacent in the seconddirection D2 are connected with each other as an integral structure, andthe first electrodes 171 of the second data writing transistors N1 oftwo sub-pixels 100 adjacent in the second direction D2 are connectedwith each other as an integral structure.

For example, the materials of the above-mentioned first to fourthconductive layers are metal materials, such as gold (Au), silver (Ag),copper (Cu), aluminum (Al), molybdenum (Mo), magnesium (Mg), tungsten(W), and alloy materials of the above metals. For example, the materialsof the first to fourth conductive layers may also be conductive metaloxide materials, such as indium tin oxide (ITO), indium zinc oxide(IZO), zinc oxide (ZnO), zinc aluminum oxide (AZO), and so on.

For example, the material of the first insulating layer to the sixthinsulating layer is, for example, an inorganic insulating layer, such assilicon oxide, silicon nitride, silicon oxynitride, or other siliconoxide, silicon nitride or silicon oxynitride, or metal oxynitrideinsulating materials, for example, aluminum oxide, and titanium nitride.

For example, the light-emitting element 120 is a top emitting structure,the first electrode 121 is reflective, and the second electrode 122 istransmissive or semi-transmissive. For example, the first electrode 121is made of a material with a high work function to act as an anode, suchas an ITO/Ag/ITO laminated structure; the second electrode 122 is madeof a material with a low work function to act as a cathode, for example,is a semi-transmissive metal or metal alloy material, such as an Ag/Mgalloy material.

At least one embodiment of the present disclosure further provides adisplay panel, which includes any one of the above display substrates10. It should be noted that the above-mentioned display substrate 10provided by at least one embodiment of the present disclosure mayinclude a light-emitting element 120, and may also not include thelight-emitting element 120, that is, the light emitting element 120 canbe formed in a panel factory after the display substrate 10 iscompleted. In the case that the display substrate 10 itself does notinclude the light-emitting element 120, the display panel provided bythe embodiment of the present disclosure further includes thelight-emitting element 120 in addition to the display substrate 10.

At least one embodiment of the present disclosure further provides adisplay device 40, as shown in FIG. 12, the display device 40 includesany one of the above-mentioned display substrates 10 or display panels,and the display device in this embodiment may be any product orcomponent that has a display function, such as a display, an OLED panel,an OLED TV, an electronic paper, a mobile phone, a tablet computer, anotebook computer, a digital photo frame, and a navigator.

What are described above is related to only the illustrative embodimentsof the present disclosure and not limitative to the protection scope ofthe present application. Therefore, the protection scope of the presentapplication shall be defined by the accompanying claims.

What is claimed is:
 1. A display substrate, comprising a base substrateand a sub-pixel on the base substrate, wherein the sub-pixel comprises apixel circuit, and the pixel circuit comprises a data writingsub-circuit, a storage sub-circuit and a driving sub-circuit, thestorage sub-circuit comprises a storage capacitor, and the capacitorcomprises a first capacitor electrode and a second capacitor electrodewhich respectively serve as a first terminal and a second terminal ofthe storage sub-circuit; the data writing sub-circuit is electricallyconnected with the first terminal of the storage sub-circuit, and isconfigured to transmit a data signal to the first terminal of thestorage sub-circuit in response to a control signal; the drivingsub-circuit comprises a control electrode, a first electrode and asecond electrode, and the control electrode is electrically connectedwith the first terminal of the storage sub-circuit; the drivingsub-circuit is configured to control a driving current which drives alight-emitting element to emit light; the display substrate furthercomprises a first connection electrode; the first connection electrodeis in a same layer as the second capacitor electrode and is insulatedform the second capacitor electrode, and the second capacitor electrodeelectrically connects the first capacitor electrode to the data writingsub-circuit.
 2. The display substrate according to claim 1, wherein thefirst connection electrode comprises a first portion extended along afirst direction and a second portion extended along a second direction,the first portion and the second portion are in an integral structure,and the first direction and the second direction are orthogonal to eachother; the first portion is electrically connected with the data writingsub-circuit and the second portion is electrically connected with thefirst capacitor electrode.
 3. The display substrate according to claim2, wherein an orthographic projection of the first portion of the firstconnection electrode on the base substrate is not overlapped with anorthographic projection of the storage capacitor on the base substrate.4. The display substrate according to claim 1, wherein the drivingsub-circuit comprises a driving transistor, and a gate electrode, afirst electrode and a second electrode of the driving transistorrespectively serve as the control electrode, the first electrode and thesecond electrode; in a direction perpendicular to the base substrate,the first connection electrode is not overlapped with a channel regionof the driving transistor.
 5. The display substrate according to claim1, further comprising a polysilicon layer on the base substrate, whereinthe control electrode of the driving sub-circuit is in the polysiliconlayer, and the first connection electrode is on a side of thepolysilicon layer away from the base substrate.
 6. The display substrateaccording to claim 1, wherein the driving current flows from the firstelectrode to the light-emitting element along a current path whichsequentially comprises a first straight current path, a second polylinecurrent path and a third U-shaped current path.
 7. The display substrateaccording to claim 6, wherein the second polyline current path and thefirst straight current path are respectively in different layers of thedisplay substrate.
 8. The display substrate according to claim 6,wherein the first straight current path is in the base substrate, andthe second polyline current path is in a layer where the firstconnection electrode is located.
 9. The display substrate according toclaim 6, further comprising a second connection electrode, wherein thesecond polyline current path is in the second connection electrode, anda first terminal of the second connection electrode is electricallyconnected with the second electrode of the driving sub-circuit.
 10. Thedisplay substrate according to claim 9, wherein in a directionperpendicular to the base substrate, the first connection electrode isnot overlapped with the second connection electrode.
 11. The displaysubstrate according to claim 9, wherein the first connection electrodeand the second connection electrode are in a same layer and areinsulated from each other.
 12. The display substrate according to claim9, further comprising a U-shaped resistor on the base substrate, whereinone terminal of the U-shaped resistor is electrically connected with asecond terminal of the second connection electrode, and another terminalof the U-shaped resistor is configured to be electrically connected withthe light-emitting element.
 13. The display substrate according to claim12, wherein the U-shaped resistor and the control electrode of thedriving sub-circuit are in a same polysilicon layer, and a resistivityof the U-shaped resistor is higher than a resistivity of the controlelectrode of the driving sub-circuit.
 14. The display substrateaccording to claim 9, wherein in a direction perpendicular to the basesubstrate, the second connection electrode is at least partiallyoverlapped with the first capacitor electrode.
 15. The display substrateaccording to claim 6, wherein an opening of the third U-shaped currentpath is facing a side where the driving sub-circuit is located.
 16. Thedisplay substrate according to claim 1, wherein the storage capacitorfurther comprises a third capacitor electrode, wherein the thirdcapacitor electrode is on a side of the first capacitor electrode awayfrom the second capacitor electrode and is configured to be electricallyconnected with the second capacitor electrode.
 17. The display substrateaccording to claim 16, wherein the third capacitor electrode is in thebase substrate.
 18. The display substrate according to claim 1,comprising a plurality of sub-pixels arranged in an array along a firstdirection and a second direction different from the first direction,wherein along the second direction, the data writing sub-circuit, thefirst connection electrode and the driving sub-circuit are sequentiallyarranged.
 19. The display substrate according to claim 18, wherein thefirst connection electrode comprises a first portion extended along thefirst direction and a second portion extended along the seconddirection, and the first portion and the second portion are in anintegral structure; the first portion is electrically connected with thedata writing sub-circuit and the second portion is electricallyconnected with the first capacitor electrode.
 20. A display device,comprising the display substrate of claim 1 and the light-emittingelement.